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公开(公告)号：EP4300541A1
公开(公告)日：2024-01-03
申请号：EP22202064.6
申请日：2022-10-18
Applicant: GlobalFoundries U.S. Inc.
Inventor： LEVY, Mark D. , LIU, Qizhi , HWANG, Jeonghyun
IPC: H01L21/02 , H01L21/265 , H01L23/373 , H01L29/10
Abstract: A structure comprising a semiconductor substrate; a buried porous semiconductor material; a semiconductor compound material and at least one device on the semiconductor compound material.
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