公开(公告)号：US12183814B1

公开(公告)日：2024-12-31

申请号：US18615615

申请日：2024-03-25

Applicant: GlobalFoundries U.S. Inc.

Inventor： Steven J. Bentley ,  Francois Hebert ,  Lawrence Selvaraj Susai ,  Johnatan A Kantarovsky ,  Michael Zierak ,  Mark D. Levy ,  John Ellis-Monaghan

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to multi-channel transistors and methods of manufacture. The structure includes: a gate structure; a single channel layer in a channel region under the gate structure; a drift region adjacent to the gate structure; and multiple channel layers in the drift region coupled to the single channel layer under the gate structure.