公开(公告)号：EP4531112A1

公开(公告)日：2025-04-02

申请号：EP24163163.9

申请日：2024-03-13

Applicant: GlobalFoundries U.S. Inc.

Inventor： KAMMLER, Thorsten E. ,  BAARS, Peter ,  ZIER, Manfred Michael

IPC: H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  B82Y10/00

Abstract: The present disclosure relates to a spin-qubit semiconductor devices and methods of manufacturing. The spin-qubit devices include on an SOI substrate: a plurality of barrier gates (12); a plurality of spin qubit gates (14), under which quantum dots are induced, and which are interdigitated with the plurality of barrier gates; two access gates (16) on opposing sides of the plurality of barrier gates, under which reservoirs are induced, a source region (22) and a drain region (22).