公开(公告)号：EP4401123A1

公开(公告)日：2024-07-17

申请号：EP23211353.0

申请日：2023-11-22

Applicant: GlobalFoundries U.S. Inc.

Inventor： ETHIRAJAN, Tamilmani ,  SHANBHAG, Kaustubh ,  MULFINGER, George R. ,  TOKRANOV, Anton V. ,  KOZARSKY, Eric S. ,  ZHAN, Hui

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/417 ,  H01L27/02

CPC classification number: H01L27/088 ,  H01L21/823481 ,  H01L21/823437 ,  H01L21/823475 ,  H01L27/0207 ,  H01L29/78 ,  H01L29/0653 ,  H01L29/41758 ,  H01L29/66628 ,  H01L29/7848 ,  H01L29/165 ,  H01L29/267

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to devices with isolation structures in active regions and methods of manufacture. The structure includes: an active region; a plurality of isolation structures (14) within the active region; a plurality of gate structures (16) overlapping the plurality of isolation structures within the active region; and diffusion regions on sides of the plurality of gate structures and the plurality of isolation structures.

公开(公告)号：EP4358124A1

公开(公告)日：2024-04-24

申请号：EP23195573.3

申请日：2023-09-06

Applicant: GlobalFoundries U.S. Inc.

Inventor： MULFINGER, George R.

IPC: H01L21/8238 ,  H01L21/84 ,  H01L27/092 ,  H01L27/12 ,  H01L29/10

CPC classification number: H01L27/092 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/1054 ,  H01L21/823878

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a device with a laterally graded channel region and methods of manufacture. The structure includes a PFET region with a laterally graded semiconductor channel region under a gate material.