公开(公告)号：EP4235795A1

公开(公告)日：2023-08-30

申请号：EP22199708.3

申请日：2022-10-05

Applicant: GlobalFoundries U.S. Inc.

Inventor： Malinowski, Arkadiusz ,  Derrickson, Alexander ,  Holt, Judson

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H01L29/735 ,  H01L29/161 ,  H01L29/737

Abstract: A structure for a lateral bipolar junction transistor, the structure comprising: a semiconductor substrate (10); a first terminal (16), for example a collector, including a first raised semiconductor layer (16) on the semiconductor substrate (10); a second terminal (18), for example an emitter, including a second raised semiconductor layer (18) on the semiconductor substrate (10); and an intrinsic base (12, 30, 28) on the semiconductor substrate, the intrinsic base positioned in a lateral direction between the first raised semiconductor layer (16) of the first terminal and the second raised semiconductor layer (18) of the second terminal. The intrinsic base includes a first portion (30) comprising silicon-germanium with a first germanium concentration that is graded in the lateral direction, a second region (12) with a substantially uniform low germanium concentration and a third region (28) with a substantially uniform high germanium content.