公开(公告)号：EP4439678A1

公开(公告)日：2024-10-02

申请号：EP23198447.7

申请日：2023-09-20

Applicant: GlobalFoundries U.S. Inc.

Inventor： Melde, Thomas ,  Richter, Ralf ,  Dünkel, Stefan

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/40 ,  H01L21/336 ,  H01L29/423

CPC classification number: H01L29/7835 ,  H01L29/66659 ,  H01L29/402 ,  H01L29/0653 ,  H01L29/1045 ,  H01L29/66628 ,  H01L29/42368

Abstract: Disclosed are embodiments of a semiconductor device and method of forming the device. The device includes a gate with first and second sections on a semiconductor layer. The first section includes first gate dielectric and gate conductor layers and an optional additional gate conductor layer on the first gate conductor layer. The second section includes second gate dielectric and gate conductor layers on the semiconductor layer and further extending onto the top of the first gate conductor layer. The second gate dielectric layer is thinner than the first gate dielectric layer. A gate sidewall spacer is on the first gate conductor layer positioned laterally to a sidewall of the second section (e.g., between the sidewall and the optional additional gate conductor layer). The first and second sections are either electrically connected for biasing with the gate bias voltage or electrically isolated for biasing with different gate bias voltages.