公开(公告)号：EP4468297A1

公开(公告)日：2024-11-27

申请号：EP23198971.6

申请日：2023-09-22

Applicant: GlobalFoundries U.S. Inc.

Inventor： Mueller, Johannes

IPC: G11C11/16 ,  G11C11/18 ,  H10B61/00 ,  H10N50/10 ,  H10N50/20

Abstract: A magnetic memory device is provided. The magnetic memory device includes a first magnetic tunnel junction (MTJ) stack, a second MTJ stack, and a spin-orbit torque (SOT) electrode. The second MTJ stack is adjacent to the first MTJ stack. The SOT electrode is connected to the first MTJ stack and the second MTJ stack, wherein the SOT electrode has a first electrode section along a first axis and a second electrode section along a second axis, and the second axis is spaced apart from and parallel to the first axis.