公开(公告)号：EP4227985A3

公开(公告)日：2023-11-15

申请号：EP22199712.5

申请日：2022-10-05

Applicant: GlobalFoundries U.S. Inc.

Inventor： Raghunathan, Uppili ,  Jain, Vibhor ,  Ventrone, Sebastian ,  Kantarovsky, Johnatan ,  Ngu, Yves

IPC: H01L21/762 ,  H01L21/763

Abstract: A structure comprising: a semiconductor substrate; a first isolation region in the semiconductor substrate, the first isolation region surrounding a portion of the semiconductor substrate; a device in the portion of the semiconductor substrate; and a second isolation region in the semiconductor substrate, the second isolation region surrounding the first isolation region and the portion of the semiconductor substrate.

公开(公告)号：EP4227985A2

公开(公告)日：2023-08-16

申请号：EP22199712.5

申请日：2022-10-05

Applicant: GlobalFoundries U.S. Inc.

Inventor： Raghunathan, Uppili ,  Jain, Vibhor ,  Ventrone, Sebastian ,  Kantarovsky, Johnatan ,  Ngu, Yves

IPC: H01L21/762 ,  H01L21/763

Abstract: A structure comprising: a semiconductor substrate; a first isolation region in the semiconductor substrate, the first isolation region surrounding a portion of the semiconductor substrate; a device in the portion of the semiconductor substrate; and a second isolation region in the semiconductor substrate, the second isolation region surrounding the first isolation region and the portion of the semiconductor substrate.