公开(公告)号：US20250054908A1

公开(公告)日：2025-02-13

申请号：US18232876

申请日：2023-08-11

Applicant: GlobalFoundries U.S. Inc.

Inventor： Brett Cucci ,  Ramsey Hazbun ,  Richard Rassel ,  Zhong-Xiang He ,  Patrick Mitchell

IPC: H01L25/065 ,  H01L21/768 ,  H01L23/48

Abstract: Structures including a compound semiconductor layer stack and methods of forming such structures. The structure comprises a device region on a substrate. The device region includes a first section of a layer stack that has a plurality of semiconductor layers, and each semiconductor layer comprises a compound semiconductor material. The structure further comprises an isolation structure disposed about the section of the layer stack, and a device in the device region. The isolation structure penetrates through the layer stack to the substrate.