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公开(公告)号：US12300627B1
公开(公告)日：2025-05-13
申请号：US18750377
申请日：2024-06-21
Applicant: GlobalFoundries U.S. Inc.
Inventor： Alain Loiseau , Peter Coutu , Romain Feuillette
IPC: H01L23/544 , H01L23/522 , H10D89/10
Abstract: Structures for an integrated circuit having a watermark and related methods. The structure comprises a first semiconductor structure including at least one feature with a variation relative to a second semiconductor structure including the at least one feature without the variation. The variation provides a watermark for identifying a Process Design Kit used to form the first semiconductor structure.
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