公开(公告)号：EP4307375A1

公开(公告)日：2024-01-17

申请号：EP23179101.3

申请日：2023-06-14

Applicant: GlobalFoundries U.S. Inc.

Inventor： TESTA, Paolo Valerio ,  SYED, Shafiullah

IPC: H01L27/06 ,  H01L27/07 ,  H01L23/522 ,  H03F3/195 ,  H01L29/92

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a common-gate amplifier circuit and methods of operation. The structure includes at least one well in a substrate, a first metal layer connected to a gate of a transistor circuit, a second metal layer overlapped over the first metal layer to form a capacitor (C3, C4), and a third metal layer connected with vias to the first metal layer and overlapped with the second metal layer to form a second capacitor (C1, C2). At least one capacitance (C5, C6, C7, C8) in at least one of a junction between the at least one well and the substrate and between overlapped metal layers of the first metal layer, the second metal layer, and the third metal layer.