公开(公告)号：EP4401120A1

公开(公告)日：2024-07-17

申请号：EP23195335.7

申请日：2023-09-05

Applicant: GlobalFoundries U.S. Inc.

Inventor： Xu, Dewei ,  Wu, Zhuojie ,  Smith, Daniel

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L21/7682 ,  H01L23/481 ,  H01L21/76898

Abstract: A structure includes a through semiconductor via (TSV) in a semiconductor substrate, and a dielectric liner surrounding the TSV and between the TSV and the semiconductor substrate. A plurality of discontinuous air gaps is in the semiconductor substrate extending away from the dielectric liner, e.g., radially. The discontinuous air gaps reduce the parasitic coupling capacitance and relieve stress in the semiconductor substrate.