公开(公告)号：EP4375717A1

公开(公告)日：2024-05-29

申请号：EP23201857.2

申请日：2023-10-05

Applicant: GlobalFoundries U.S. Inc.

Inventor： Pandey, Shesh Mani ,  Bian, Yusheng ,  Srivastava, Ravi Prakash

IPC: G02B6/12 ,  G02B6/132 ,  G02B6/136

CPC classification number: G02B6/12002 ,  G02B6/136 ,  G02B6/12004 ,  G02B6/132 ,  G02B2006/1206120130101

Abstract: Structures and methods implement an enlarged multilayer nitride waveguide. The structure may include an inter-level dielectric (ILD) layer over a substrate. A first enlarged multilayer nitride waveguide is positioned in the ILD layer in a region of the substrate. A second multilayer nitride waveguide may also be provided in the ILD layer. A lower cladding layer defines a lower surface of the nitride waveguide(s). The lower cladding layer has a lower refractive index than the nitride waveguide(s). Additional lower refractive index cladding layers can be provided on the upper surface and/or sidewalls of the nitride waveguide(s). The enlarged nitride waveguide may be implemented with other conventional silicon and nitride waveguides.