公开(公告)号：EP4287262A1

公开(公告)日：2023-12-06

申请号：EP22201887.1

申请日：2022-10-17

Applicant: GlobalFoundries U.S. Inc.

Inventor： BAARS, Peter ,  ONTALUS, Viorel ,  TAILOR, Ketankumar H. ,  ZIER, Michael ,  KENNEY, Crystal R. ,  HOLT, Judson

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/737 ,  H01L21/331 ,  H01L21/762 ,  H01L27/06 ,  H01L27/12

Abstract: A structure comprising: a semiconductor substrate including a trench; a first semiconductor layer including a portion adjacent to the trench; a dielectric layer between the first semiconductor layer and the semiconductor substrate, the dielectric layer having an interface with the first semiconductor layer; a second semiconductor layer in the trench, the second semiconductor layer including a first portion that is recessed relative to the interface; and a vertical heterojunction bipolar transistor including a collector in the first portion of the second semiconductor layer.