公开(公告)号：EP4468046A1

公开(公告)日：2024-11-27

申请号：EP23209581.0

申请日：2023-11-14

Applicant: GlobalFoundries U.S. Inc.

Inventor： HEDRICK, Brittany ,  MELVILLE, Ian ,  WEBSTER, Michael David ,  COX, Harry ,  LUBGUBAN, Jorge ,  KNICKERBOCKER, Sarah

IPC: G02B6/136 ,  G02B6/42 ,  G02B6/122 ,  G02B6/30 ,  G02B6/12

Abstract: Structures for a photonics chip that include a cavity or groove and methods of forming same. The structure comprises a semiconductor substrate including a first opening, a back-end-of-line stack on the semiconductor substrate, and a dielectric layer on the back-end-of-line stack. The back-end-of-line stack includes a pad, and the dielectric layer includes a second opening that extends to the pad. The structure further comprises an electrical interconnect inside the second opening in the dielectric layer. The electrical interconnect includes a sidewall that is separated in a lateral direction from the dielectric layer by a gap.