公开(公告)号：US20230318255A1

公开(公告)日：2023-10-05

申请号：US18124658

申请日：2023-03-22

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shohei HAYASHI ,  Kazuue FUJITA ,  Akio ITO ,  Atsushi NAKANISHI

IPC: H01S5/02253 ,  H01S5/02216 ,  H01S5/34 ,  H01S5/02315 ,  H01S5/14 ,  H01S5/06

CPC classification number: H01S5/02253 ,  H01S5/02216 ,  H01S5/3402 ,  H01S5/02315 ,  H01S5/141 ,  H01S5/0607 ,  H01S2302/02

Abstract: The laser module includes a QCL element and a support member. The QCL element has a first end surface located on a first side in a second direction orthogonal to a stacking direction and a second end surface located on a second side opposite to the first side in the second direction. The substrate has first to fourth substrate-surfaces. The support member has a first portion having a first surface facing at least a portion of the fourth substrate-surface, and a second portion having a second surface facing at least a portion of the first substrate-surface and a third surface located opposite to the second surface in the second direction. At least a part of the terahertz wave generated in the active layer is incident on the second surface of the support member through the substrate and is emitted from the third surface through the inside of the second portion.

公开(公告)号：US20230361536A1

公开(公告)日：2023-11-09

申请号：US18115844

申请日：2023-03-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hisanari TAKAHASHI ,  Kazuue FUJITA ,  Shohei HAYASHI

IPC: H01S5/04 ,  H01S5/34 ,  H01S5/02 ,  H01S5/02253

CPC classification number: H01S5/3402 ,  H01S5/021 ,  H01S5/02253 ,  H01S5/041 ,  H01S2302/02

Abstract: The laser module includes a QCL element and a light source. The QCL element includes a substrate, a lower clad layer provided on the substrate, an active layer that is provided on an opposite side of the lower clad layer from the substrate and generates a first terahertz wave, an upper clad layer provided on an opposite side of the active layer from the lower clad layer, and a first electrode provided on an opposite side of the upper clad layer from the active layer. The second terahertz wave from the light source enters the active layer through the substrate, is reflected by the first electrode, and is amplified or wavelength-converted. The third terahertz wave amplified or wavelength-converted in the active layer is emitted to the outside through the substrate.

公开(公告)号：US20220209505A1

公开(公告)日：2022-06-30

申请号：US17608225

申请日：2020-12-16

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuue FUJITA ,  Shohei HAYASHI ,  Hiroyasu FUJIWARA ,  Atsushi NAKANISHI ,  Akio ITO ,  Tatsuo DOUGAKIUCHI

IPC: H01S5/34 ,  H01S5/343

Abstract: A laser module including a quantum cascade laser that includes a substrate having a main surface, a first clad layer provided on the main surface, an active layer provided on the first clad layer, and a second clad layer provided on the active layer, and a lens that has a lens plane disposed at a position facing the end surface of the active layer. An end surface of the active layer constitutes a resonator that causes light of a first frequency and light of a second frequency to oscillate, and the active layer is configured to generate a terahertz wave of a differential frequency between the first frequency and the second frequency. The substrate is in direct contact or indirect contact with the lens plane, and the end surface of the active layer is inclined with respect to a portion facing the end surface in the lens plane.

公开(公告)号：US20210305786A1

公开(公告)日：2021-09-30

申请号：US17214084

申请日：2021-03-26

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuue FUJITA ,  Masahiro HITAKA

IPC: H01S5/34

Abstract: A QCL includes a semiconductor substrate and an active layer provided on the semiconductor substrate. The active layer has a cascade structure in which a unit laminate including a light emission layer which generates light and an injection layer to which electrons are transported from the light emission layer is laminated in multiple stages. The light emission layer and the injection layer each have a quantum well structure in which quantum well layers and barrier layers are alternately laminated. A separation layer including a separation quantum well layer having a layer thickness smaller than an average layer thickness of the quantum well layers included in the light emission layer and smaller than an average layer thickness of the quantum well layers included in the injection layer is provided between the light emission layer and the injection layer in the unit laminate.

公开(公告)号：US20170063044A1

公开(公告)日：2017-03-02

申请号：US15251119

申请日：2016-08-30

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuo DOUGAKIUCHI ,  Kazuue FUJITA ,  Akio ITO ,  Tadataka EDAMURA

IPC: H01S5/34 ,  H01S5/24 ,  H01S5/14

CPC classification number: H01S5/3402 ,  H01S5/0267 ,  H01S5/0604 ,  H01S5/1028 ,  H01S5/1096 ,  H01S5/1221 ,  H01S5/124 ,  H01S5/141 ,  H01S5/18 ,  H01S5/2018 ,  H01S2302/02

Abstract: A quantum cascade laser is configured with a semiconductor substrate, and an active layer provided on a first surface of the substrate and having a multistage lamination of unit laminate structures each of which includes an emission layer and an injection layer. The active layer is configured to be capable of generating first pump light of a frequency ω1 and second pump light of a frequency ω2, and to generate output light of a difference frequency ω by difference frequency generation. An external diffraction grating is provided constituting an external cavity for generating the first pump light and configured to be capable of changing the frequency ω1, outside an element structure portion including the active layer. Grooves respectively formed in a direction intersecting with a resonating direction are provided on a second surface of the substrate.

Abstract translation: 量子级联激光器被配置为具有半导体衬底和设置在衬底的第一表面上的有源层，并且具有包括发射层和注入层的单元层叠结构的多级叠层。 有源层被配置为能够产生频率ω1的第一泵浦光和频率ω2的第二泵浦光，并且通过差频产生产生差频ω的输出光。 提供外部衍射光栅，其构成用于产生第一泵浦光的外部空腔，并且被配置为能够在包括有源层的元件结构部分外部改变频率ω1。 分别在与谐振方向相交的方向上形成的槽设置在基板的第二表面上。

公开(公告)号：US20250079805A1

公开(公告)日：2025-03-06

申请号：US18822534

申请日：2024-09-03

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hisanari TAKAHASHI ,  Kazuue FUJITA ,  Tatsuo DOUGAKIUCHI

IPC: H01S5/34 ,  G01N21/3581

Abstract: A terahertz wave detection device includes a QCL element, an optical component disposed such that a laser beam emitted from the QCL element passes, and a photodetector that detects the laser beam having passed through the optical component. The QCL element has a semiconductor layer including an active layer in which unit stacked bodies including a light emitting layer and an injection layer are stacked in multiple stages. The unit stacked body is configured to be able to oscillate a first laser beam having a first wavelength and a second laser beam having a second wavelength. The QCL element is configured to change oscillation degrees of the first and second laser beams in accordance with the incidence of the terahertz wave on the QCL element. The optical component is configured to cause either one of the first laser beam and the second laser beam to be incident on the photodetector.

公开(公告)号：US20210351570A1

公开(公告)日：2021-11-11

申请号：US17313389

申请日：2021-05-06

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuue FUJITA ,  Masahiro HITAKA ,  Atsushi SUGIYAMA ,  Kousuke SHIBATA

IPC: H01S5/34 ,  H01S5/30 ,  H01S5/042

Abstract: A quantum cascade laser device includes a semiconductor substrate, an active layer provided on the semiconductor substrate, and an upper clad layer provided on a side of the active layer opposite to the semiconductor substrate side and having a doping concentration of impurities of less than 1×1017 cm−3. Unit laminates included in the active layer each include a first emission upper level, a second emission upper level, and at least one emission lower level in their subband level structure. The active layer is configured to generate light having a center wavelength of 10 μm or more due to electron transition between at least two levels of the first emission upper level, the second emission upper level, and the at least one emission lower level in the light emission layer in each of the unit laminates.

公开(公告)号：US20190326466A1

公开(公告)日：2019-10-24

申请号：US16386604

申请日：2019-04-17

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masahiro HITAKA ,  Akio ITO ,  Tatsuo DOUGAKIUCHI ,  Kazuue FUJITA ,  Tadataka EDAMURA

IPC: H01L31/173 ,  H01S5/34 ,  H01L31/0352 ,  H01L31/0224 ,  H01S5/02 ,  H01S5/22 ,  H01S5/026 ,  H01S5/042 ,  H01S5/343 ,  H01L31/0304 ,  H01L31/18 ,  G01N21/25

Abstract: An optical semiconductor element includes a semiconductor substrate, a first laminated structure provided on a front surface of the semiconductor substrate, and a second laminated structure provided on the front surface of the semiconductor substrate, the first laminated structure includes a first quantum cascade region, the second laminated structure includes a dummy region having the same layer structure as the first quantum cascade region, a second quantum cascade region provided on the front surface of the semiconductor substrate via the dummy region, and one of the first quantum cascade region and the second quantum cascade region is a quantum cascade laser, and the other of the first quantum cascade region and the second quantum cascade region is a quantum cascade detector.

公开(公告)号：US20190271642A1

公开(公告)日：2019-09-05

申请号：US16285274

申请日：2019-02-26

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuki HORITA ,  Yoichi KAWADA ,  Atsushi NAKANISHI ,  Kazuue FUJITA ,  Hironori TAKAHASHI ,  Hiroshi SATOZONO

IPC: G01N21/3586 ,  G01N21/552 ,  G01J3/42

Abstract: An optical measurement device includes a light source configured to output a terahertz wave and coaxial light having a wavelength different from the wavelength of the terahertz wave, coaxially with the terahertz wave; an intensity modulation unit configured to perform intensity modulation of at least the terahertz wave of the terahertz wave and the coaxial light in a predetermined modulation frequency; and a light detection unit configured to synchronously detects each of the terahertz wave and the coaxial light which have acted on a measurement subject via the intensity modulation unit based on the modulation frequency.

公开(公告)号：US20190234871A1

公开(公告)日：2019-08-01

申请号：US16245355

申请日：2019-01-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi NAKANISHI ,  Kazuue FUJITA ,  Kazuki HORITA

IPC: G01N21/3586 ,  G02B17/04 ,  G01J3/02

Abstract: A terahertz wave spectroscopic measurement device includes a light source that emits a terahertz wave and probe light having a wavelength different from that of the terahertz wave, an internal total reflection prism including an incidence surface of the terahertz wave, a placement surface on which a measurement target is placed, and an emission surface of the terahertz wave, the internal total reflection prism internally totally reflecting the terahertz wave incident from the incidence surface by means of the placement surface and emitting the terahertz wave from the emission surface, and a terahertz wave detection unit that indirectly detects the terahertz wave emitted from the emission surface using the probe light. The internal total reflection prism includes an avoidance portion on which incidence of the probe light on the measurement target on the placement surface is avoided.