公开(公告)号：DE602004029235D1

公开(公告)日：2010-11-04

申请号：DE602004029235

申请日：2004-01-16

Applicant: HAMAMATSU PHOTONICS KK

Inventor： WATANABE TAKASHI ,  AKAI YOSHIRO ,  SAKAI SHIROU

IPC: H01J9/12 ,  C22B5/04 ,  C22B26/10 ,  C23C14/14 ,  C23C14/24 ,  H01J1/32 ,  H01J1/34 ,  H01J1/35 ,  H01J29/38 ,  H01J31/50 ,  H01J40/06 ,  H01J43/08 ,  H01J43/18

公开(公告)号：EP1521286A4

公开(公告)日：2006-12-13

申请号：EP04702788

申请日：2004-01-16

Applicant: HAMAMATSU PHOTONICS KK

Inventor： SUGIYAMA HIROYUKI ,  AKAI YOSHIRO ,  SAKAI SHIROU

IPC: C22B5/04 ,  C22B26/10 ,  C23C14/14 ,  C23C14/24 ,  H01J1/35 ,  H01J9/12

CPC classification number: C22B26/10 ,  C22B5/04 ,  C23C14/14 ,  C23C14/243 ,  H01J1/35 ,  H01J9/12 ,  H01J2201/32 ,  H01J2201/3426

Abstract: An alkali metal generating agent (1) for use in forming a photoelectric surface emitting a photoelectron corresponding to an incident light or a secondary electron emission surface emitting a secondary electron corresponding to an incident electron, which comprises an oxidizing agent comprising at least one tungstate having an alkali metal ion as a counter cation and a reducing agent for reducing the above cation. The above metal generating agent (1), which includes a tungstate having weaker oxidizing power than that of a chromate, undergoes slower oxidation-reduction reaction, which results in easier reaction rate control as compared to a conventional technique using a chromate, leading to the generation of an alkali metal with good stability.

公开(公告)号：EP1598844A4

公开(公告)日：2006-12-06

申请号：EP04702855

申请日：2004-01-16

Applicant: HAMAMATSU PHOTONICS KK

Inventor： WATANABE TAKASHI ,  AKAI YOSHIRO ,  SAKAI SHIROU

IPC: C22B5/04 ,  C22B26/10 ,  C23C14/14 ,  C23C14/24 ,  H01J1/32 ,  H01J1/34 ,  H01J1/35 ,  H01J9/12 ,  H01J29/38 ,  H01J31/50 ,  H01J40/06 ,  H01J43/08 ,  H01J43/18

CPC classification number: C22B26/10 ,  C22B5/04 ,  C23C14/14 ,  C23C14/243 ,  H01J1/35 ,  H01J9/12 ,  H01J2201/32 ,  H01J2201/3426

Abstract: An alkali metal generating agent (1) for use in forming a photoelectric surface emitting a photoelectron corresponding to an incident light or a secondary electron emission surface emitting a secondary electron corresponding to an incident electron, which comprises an oxidizing agent comprising at least one vanadate having an alkali metal ion as a counter cation and a reducing agent for reducing the above cation. The above metal generating agent (1), which includes a vanadate having weaker oxidizing power than that of a chromate, undergoes slower oxidation-reduction reaction, which results in easier reaction rate control as compared to a conventional technique using a chromate, leading to the generation of an alkali metal with good stability.

公开(公告)号：EP1585159A4

公开(公告)日：2006-12-13

申请号：EP04702804

申请日：2004-01-16

Applicant: HAMAMATSU PHOTONICS KK

Inventor： SUGIYAMA HIROYUKI ,  AKAI YOSHIRO ,  SAKAI SHIROU

IPC: C22B5/04 ,  C22B26/10 ,  C23C14/14 ,  C23C14/24 ,  H01J1/35 ,  H01J9/12

CPC classification number: C22B26/10 ,  C22B5/04 ,  C23C14/14 ,  C23C14/243 ,  H01J1/35 ,  H01J9/12 ,  H01J2201/32 ,  H01J2201/3426

Abstract: An alkali metal generating agent (1) for use in forming a photoelectric surface emitting a photoelectron corresponding to an incident light or a secondary electron emission surface emitting a secondary electron corresponding to an incident electron, which comprises an oxidizing agent comprising at least one molybdate having an alkali metal ion as a counter cation and a reducing agent for reducing the above cation. The above metal generating agent (1), which includes a molybdate having weaker oxidizing power than that of a chromate, undergoes slower oxidation-reduction reaction, which results in easier reaction rate control as compared to a conventional technique using a chromate, leading to the generation of an alkali metal with good stability.

公开(公告)号：JPH0334484A

公开(公告)日：1991-02-14

申请号：JP16871789

申请日：1989-06-30

Applicant: HAMAMATSU PHOTONICS KK

Inventor： TAKAHASHI SATOSHI ,  KOISHI YU ,  MASUDA NAOKI ,  AKAI YOSHIRO

IPC: H01S5/068

Abstract: PURPOSE:To realize frequency stability even in a long wavelength band by a method wherein a light from a semiconductor light-emitting element is made to branch into an output light and a light to be detected, the latter is transformed into a transformed wavelength light of a shorter wave length, a change in the wavelength of the transformed light is detected and a control is made on the basis of a detection output so that an oscillation wavelength of the element be a prescribed one. CONSTITUTION:A semiconductor laser 1 as a light source outputs a laser light L0, which is made to branch into a stabilized output light L1 and a light L2 to be detected, by a half mirror MM. The light L2 to be detected is inputted to a wavelength transformation element 2 and it is turned thereby into a transformed wavelength light L3 of a wavelength of 1/2 and made to enter a wavelength change detector 3. The detector 3 can be constructed of a hollow cathode lamp utilizing a photo-galvanic effect and can convert a minute change in the wavelength into an electric change. This detection output is given to a drive current source 5 through the intermediary of a detecting element 4, a negative feedback is applied to a drive current of the semiconductor laser 1, and an oscillation wavelength can be controlled by controlling the drive current. A temperature control element 6 controls the temperature of the semiconductor laser 1. By the above constitution, high frequency stability can be realized.

公开(公告)号：JPS61294752A

公开(公告)日：1986-12-25

申请号：JP13565585

申请日：1985-06-21

Applicant: HAMAMATSU PHOTONICS KK

Inventor： AKAI YOSHIRO

IPC: H01J61/35

Abstract: PURPOSE:To maintain good light transmission characteristic even at such wavelength region as shorter than 250nm and longer side while employing conventional pipe material such as fused silicon or synthetic silicon by coating alphaAl2O3 thin film onto the inner face of discharge tube container. CONSTITUTION:Organic metal compound of aluminum, complex to be shown by Al(OR)n(OR')3-n, Al(OR)3, Al(R)3O2# >, organic solvent solution such as alcohlate acetylacetonate where the concentration of Al is 0.5-10wt% is applied onto the inner face of the section 1B which is utilized as the discharge tube container of discharge container element assembly 10 then dried. Organic solvent is removed under low temperature (lower than 100 deg.C) then burnt for 30-60min under the air or oxygen with the temperature higher than 500 deg.C to produce Al2O3 film. Then the temperature for producing alphaAl2O3 is increased to 1,000-1,100 deg.C to lead in steam for 30-60min. Thereafter, supply of steam is stopped to perform thermal processing under same temperature for 30-60min to complete alpha alpha-process.