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    Secondary electron emission surface
    3.
    发明专利
    Secondary electron emission surface 失效
    二次电子发射表面

    公开(公告)号：JPS6185747A

    公开(公告)日：1986-05-01

    申请号：JP20682184

    申请日：1984-10-02

    Applicant: Hamamatsu Photonics Kk

    Inventor： SUZUKI AKIHIRO ,  SAKAMOTO TOMIYASU

    IPC: H01J1/32 ,  H01J29/41 ,  H01J43/18

    CPC classification number: H01J1/32

    Abstract: PURPOSE: To extremely minimize deterioration in a secondary electron multiplica tion ratio due to use while being simple to manufacture by forming the secon dary electron emission surface while oxidizing the surface of an aluminum metal.
    CONSTITUTION: The secondary electron emission surface is formed on the inside walls 1aW4a of the diodes 1W4. Said secondary electron emission surface is formed by oxidizing the surface of an aluminum metal. Said aluminum metal is formed on a nickel plate by vacuum evaporation. Next, the secondary electron emission surface is incorporated inside an airtight container 10 while evacuating the container 10 followed by forming a photoelectric surface 7 where antimony, natrium, potassium and cesium are vacuum-evaporated on the inside wall of an incident window 5. The vacuum evaporation sources 15 and 16 are provided between an electrode 6 for focusing and the window 5 while being vacuum- evaporated by conduction or high frequency heating. In this way, the deteriora tion in the secondary electron multiplication ratio due to use can be made extremely small while being simple to manufacture.
    COPYRIGHT: (C)1986,JPO&Japio

    Abstract translation: 目的：通过在氧化铝金属的表面的同时形成第二电子发射表面，在使用简单的同时极大地最小化二次电子倍增比的劣化。 构成：二次电子发射表面形成在二极管1-4的内壁1a-4a上。 所述二次电子发射表面是通过氧化铝金属的表面而形成的。 所述铝金属通过真空蒸发形成在镍板上。 接下来，二次电子发射表面被并入密封容器10内，同时抽空容器10，随后形成光电表面7，其中锑，钠，钾和铯真空蒸发在入射窗5的内壁上。真空 蒸发源15和16设置在用于聚焦的电极6和窗口5之间，同时通过传导或高频加热被真空蒸发。 以这种方式，由于使用时的二次电子倍增比的劣化可以制造得非常小，同时制造简单。

    NOCTOVISION
    4.
    发明专利
    NOCTOVISION 失效

    公开(公告)号：JPH0638081A

    公开(公告)日：1994-02-10

    申请号：JP18537292

    申请日：1992-07-13

    Applicant: HAMAMATSU PHOTONICS KK

    Inventor： KATO MASAYOSHI ,  SUZUKI KENJI ,  SAKAMOTO TOMIYASU ,  TAKADA HIROSHIGE ,  YONEZAWA MICHIHARU ,  TAKEYAMA CHIKAYOSHI ,  WATASE FUMIO

    IPC: H01J31/50 ,  H04N5/225

    Abstract: PURPOSE:To considerably improve the performance of the high-sensitivity dark viewing device by embedding light sources, which successively emit plural infrared rays while turning on/off them, near the periphery of the image pickup center of an object while integrating them to a main body. CONSTITUTION:Plural infrared light emitting diodes 6, 6A and 6B are interally embedded in a main body 1, and the periphery of the image pickup center of an object 5 is successively irradiated with tuning on/off light. The timing of turning on/off the light overlaps the turn-on of the diodes 6 and 6A just for time t, and the light emission of a fluorescent plane 33 is continued without being interrupted. The infrared beams reflected from the object 5 are made incident to an objective lens 2, an image is formed, and the optical image is divided into picture elements by a fiber plate 30 and converted to an electronic image by a photocathode 31. This electronic image is converted to the optical image again on the fluorescent plane 33.

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