DUAL IN-LINE MEMORY MODULE
    1.
    发明申请
    DUAL IN-LINE MEMORY MODULE 审中-公开
    双列直插存储模块

    公开(公告)号:WO2017135967A1

    公开(公告)日:2017-08-10

    申请号:PCT/US2016/016782

    申请日:2016-02-05

    CPC classification number: G11C5/025 G11C5/04 G11C2207/105

    Abstract: According to an example, a dual in-line memory module (DIMM) may include a high density package substrate including a plurality of connectors for communicatively interconnecting the DIMM to a system, and a device including at least one of a first die including a plurality of wirebonds and associated wirebond pads to directly interface with the high density package substrate, and a second die including a plurality of connection pads to directly interface with the high density package substrate.

    Abstract translation: 根据一个示例,双列直插式存储器模块(DIMM)可以包括高密度封装基板,该高密度封装基板包括用于将DIMM通信地互连到系统的多个连接器,以及包括至少一个 第一裸片和第二裸片中的一个,第一裸片包括多个引线键合和相关联的引线键合垫以直接与高密度封装基板接合,第二引线包括多个连接垫以直接与高密度封装基板接合。

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