公开(公告)号：EP3062907A4

公开(公告)日：2017-08-16

申请号：EP13896580

申请日：2013-10-30

Applicant: HEWLETT-PACKARD DEV COMPANY L P

Inventor： MCKAY ROGER A ,  SADIK PATRICK W

IPC: B01D39/14 ,  B01D67/00 ,  B01D69/02 ,  B81B7/00 ,  B81C1/00 ,  C23C14/58 ,  C23C18/16 ,  C23F1/00 ,  C23F1/14

CPC classification number: B01D29/0093 ,  B01D35/02 ,  B01D67/0032 ,  B01D69/02 ,  B01D2325/021 ,  B81B7/0061 ,  C23C14/5873 ,  C23C18/1603 ,  C23F1/00 ,  C23F1/02

Abstract: A method comprises forming etching islands on a substrate and exposing the substrate with etching islands to a solution that reacts with the etching islands to form a filter passage of interconnected pores in the substrate. The filter passage has an inlet into the substrate and an outlet from the substrate.

Abstract translation: 一种方法包括在基板上形成蚀刻岛并且将具有蚀刻岛的基板暴露于溶液，该溶液与蚀刻岛反应以在基板中形成互连孔的过滤器通道。 过滤器通道具有进入基板的入口和来自基板的出口。

公开(公告)号：EP3062918A4

公开(公告)日：2017-07-26

申请号：EP13896392

申请日：2013-10-30

Applicant: HEWLETT-PACKARD DEV COMPANY L P

Inventor： MCKAY ROGER A ,  SADIK PATRICK W

IPC: B01D69/00

CPC classification number: C23F1/16 ,  B81B2201/058 ,  B81C1/00119 ,  B81C1/00539 ,  B81C2201/0115 ,  B81C2201/014 ,  C23C14/5873 ,  C23F1/02 ,  H01M4/0492 ,  H01M4/386

Abstract: Etching islands are formed on a first face of a substrate and a second face of the substrate non-parallel to the first face. The first face and the second face of the substrate are concurrently exposed to a solution that reacts with the etching islands to concurrently form porous regions extending into the first face and the second face.

Abstract translation: 蚀刻岛形成在衬底的第一面上并且衬底的第二面不平行于第一面。 衬底的第一面和第二面同时暴露于与蚀刻岛反应的溶液中，以同时形成延伸到第一面和第二面中的多孔区域。