公开(公告)号：WO2015030787A1

公开(公告)日：2015-03-05

申请号：PCT/US2013/057482

申请日：2013-08-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： GE, Ning ,  CHIA, Leong Yap ,  LEE, Pin Chin ,  RANDO, Jose Jehrome

IPC: H01L21/336

CPC classification number: H01L29/66575 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/823437 ,  H01L21/823481 ,  H01L29/0847 ,  H01L29/66659 ,  H01L29/78 ,  H05K2203/013

Abstract: A semiconductor device and method of forming the same is described. In an example, a polysilicon layer is deposited on a substrate having at least one polysilicon ring. The substrate is doped using the polysilicon layer as a mask to form doped regions in the substrate. A dielectric layer is deposited over the polysilicon layer and the substrate. The dielectric layer is etched to expose portions of the polysilicon layer. A metal layer is deposited on the dielectric layer. The metal layer, the dielectric layer, and the exposed portions of the polysilicon layer are etched such that at least a portion of each polysilicon ring is removed.

Abstract translation: 对半导体装置及其形成方法进行说明。 在一个实例中，多晶硅层沉积在具有至少一个多晶硅环的衬底上。 使用多晶硅层作为掩模掺杂衬底，以在衬底中形成掺杂区域。 介电层沉积在多晶硅层和衬底上。 蚀刻介电层以暴露多晶硅层的部分。 金属层沉积在电介质层上。 蚀刻金属层，电介质层和多晶硅层的露出部分，使得去除每个多晶硅环的至少一部分。

公开(公告)号：WO2016068880A1

公开(公告)日：2016-05-06

申请号：PCT/US2014/062632

申请日：2014-10-28

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： GE, Ning ,  CHIA, Leong Yap ,  LEE, Pin Chin

IPC: B41J2/175 ,  B41J2/135

CPC classification number: B41J2/04581 ,  B41J2/04541 ,  B41J2/0458 ,  B41J2/135 ,  B41J2/1753 ,  B41J2/17546 ,  B41J2202/17

Abstract: A printhead having a number of single-dimensional memristor banks is described. The printhead includes a number of nozzles to deposit an amount of fluid onto a print medium. Each nozzle includes a firing chamber to hold the amount of fluid, an opening to dispense the amount of fluid onto the print medium, and an ejector to eject the amount of fluid through the opening. The printhead also includes a number of single-dimensional memristor banks. Each memristor bank includes a number of memristors arranged in a single dimension and a number of serially-connected de-multiplexers to selectively activate a target memristor of the memristor bank. The number of serially- connected de-multiplexers is equal to the number of memristors and an output of at least one de-multiplexer is an input into a subsequent de-multiplexer.

Abstract translation: 描述了具有多个单维避震器组的打印头。 打印头包括多个喷嘴以将一定量的流体沉积到打印介质上。 每个喷嘴包括用于保持流体量的喷射室，用于将流体分配到打印介质上的开口，以及喷射器，以将流体的量通过开口排出。 打印头还包括一些单维忆阻器组。 每个忆阻器组件包括一些排列在单个维度上的忆阻器和多个串联连接的去多路复用器，以选择性地激活忆阻器银行的目标忆阻器。 串行连接的解复用器的数量等于忆阻器的数量，并且至少一个解复用器的输出是后续去多路复用器的输入。

公开(公告)号：WO2016068927A1

公开(公告)日：2016-05-06

申请号：PCT/US2014/063093

申请日：2014-10-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： GE, Ning ,  CHIA, Leong Yap ,  LEE, Pin Chin

IPC: B41J2/175 ,  B41J2/135

CPC classification number: B41J2/04581 ,  B41J2/04541 ,  B41J2/0458 ,  B41J2/1753 ,  B41J2/17546 ,  B41J2202/17

Abstract: A printhead with a number of enclosed shared selectors is described. The printhead includes a number of nozzles to deposit an amount of fluid onto a print medium. Each nozzle includes a firing chamber to hold an amount of fluid, an opening to dispense the amount of fluid onto a print medium, and an ejector to eject the amount of fluid through the opening. The printhead also includes a memristor array. The memristor array includes a number of memristors to store information and a number of selectors. The number of selectors includes a number of column selectors to select columns of memristors and a number of row selectors to select rows of memristors. A portion of the number of selectors are enclosed selectors.

Abstract translation: 描述了具有多个封闭共享选择器的打印头。 打印头包括多个喷嘴以将一定量的流体沉积到打印介质上。 每个喷嘴包括用于保持一定量的流体的燃烧室，用于将流体量分配到打印介质上的开口，以及喷射器以将流体的量排出通过开口。 打印头还包括忆阻器阵列。 忆阻器阵列包括一些存储信息的忆阻器和多个选择器。 选择器的数量包括多个列选择器以选择忆阻器的列和多个行选择器来选择忆阻器的行。 选择器数量的一部分是封闭式选择器。

公开(公告)号：EP3039712B1

公开(公告)日：2020-08-05

申请号：EP13892776.9

申请日：2013-08-30

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： GE, Ning ,  CHIA, Leong Yap ,  LEE, Pin Chin ,  RANDO, Jose Jehrome

IPC: H01L21/336 ,  H01L29/66 ,  H01L21/28 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/08

公开(公告)号：EP3039712A1

公开(公告)日：2016-07-06

申请号：EP13892776.9

申请日：2013-08-30

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： GE, Ning ,  CHIA, Leong Yap ,  LEE, Pin Chin ,  RANDO, Jose Jehrome

IPC: H01L21/336

CPC classification number: H01L29/66575 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/823437 ,  H01L21/823481 ,  H01L29/0847 ,  H01L29/66659 ,  H01L29/78 ,  H05K2203/013

Abstract: A semiconductor device and method of forming the same is described. In an example, a polysilicon layer is deposited on a substrate having at least one polysilicon ring. The substrate is doped using the polysilicon layer as a mask to form doped regions in the substrate. A dielectric layer is deposited over the polysilicon layer and the substrate. The dielectric layer is etched to expose portions of the polysilicon layer. A metal layer is deposited on the dielectric layer. The metal layer, the dielectric layer, and the exposed portions of the polysilicon layer are etched such that at least a portion of each polysilicon ring is removed.

Abstract translation: 描述半导体器件及其形成方法。 在一个示例中，多晶硅层沉积在具有至少一个多晶硅环的衬底上。 使用多晶硅层作为掩模来掺杂衬底以在衬底中形成掺杂区域。 介电层沉积在多晶硅层和衬底上。 蚀刻电介质层以暴露多晶硅层的部分。 金属层沉积在介电层上。 蚀刻金属层，电介质层和多晶硅层的暴露部分，使得每个多晶硅环的至少一部分被去除。