公开(公告)号：US20190100007A1

公开(公告)日：2019-04-04

申请号：US16067788

申请日：2016-06-24

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  The State of Oregon State Board of Higher Education on behalf of Oregon State University

Inventor： James Elmer Abbott, Jr. ,  John M McGlone ,  Kristopher Olsen ,  Roberto A Pugliese ,  Greg Scott Long ,  Douglas A Keszler ,  John Wager

IPC: B41J2/14 ,  B41J2/16 ,  C22C45/00

CPC classification number: B41J2/14129 ,  B41J2/1606 ,  B41J2/1646 ,  B41J2202/03 ,  C22C1/002 ,  C22C45/00 ,  C22C45/10 ,  C23C14/0036 ,  C23C14/08 ,  C23C14/185 ,  C23C28/04 ,  H01B1/02

Abstract: An amorphous thin metal film can include a combination of metals or metalloids including: 5 at % to 74 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 74 at % of a first metal; 5 at % to 74 at % of a second metal; and 5 at % to 70 at % of a dopant. The first and second metals can be independently selected from the group of titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, or platinum, wherein the first metal and the second metal can be different metals. The dopant can be selected from the group of oxygen, nitrogen, or combinations thereof. The metalloid, first metal, second metal, and dopant can account for at least 70 at % of the amorphous thin metal film.

公开(公告)号：US10449763B2

公开(公告)日：2019-10-22

申请号：US16067788

申请日：2016-06-24

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  The State of Oregon State Board of Higher Education on behalf of Oregon State University

Inventor： James Elmer Abbott, Jr. ,  John M McGlone ,  Kristopher Olsen ,  Roberto A Pugliese ,  Greg Scott Long ,  Douglas A Keszler ,  John Wager

IPC: B41J2/14 ,  C23C14/00 ,  H01B1/02 ,  B41J2/16 ,  C22C45/00 ,  C23C14/08 ,  C23C14/18 ,  C23C28/04

Abstract: An amorphous thin metal film can include a combination of metals or metalloids including: 5 at % to 74 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 74 at % of a first metal; 5 at % to 74 at % of a second metal; and 5 at % to 70 at % of a dopant. The first and second metals can be independently selected from the group of titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, or platinum, wherein the first metal and the second metal can be different metals. The dopant can be selected from the group of oxygen, nitrogen, or combinations thereof. The metalloid, first metal, second metal, and dopant can account for at least 70 at % of the amorphous thin metal film.

公开(公告)号：US20190119101A1

公开(公告)日：2019-04-25

申请号：US16068261

申请日：2016-06-24

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  The State of Oregon State Board of Higher Education on behalf of Oregon State University

Inventor： James Elmer Abbott, Jr. ,  John M McGlone ,  Kristopher Olsen ,  Roberto A Pugliese ,  Greg Scott Long ,  John Wager ,  Douglas A Keszler ,  T. Stafford Johnson ,  William F Stickel

IPC: B81B7/00 ,  C23C14/18 ,  C23C8/10 ,  C23C14/34 ,  B81C1/00 ,  B41J2/14

Abstract: An amorphous thin film stack can include a first layer including a combination metals or metalloids including: 5 at % to in 90 at % of a metalloid; 5 at % to 90 at % of a first metal and a second metal independently selected from titanium, vanadium, chromium, iron, cobalt, nickel, niobium, molybdenum, ruthenium, rhodium, palladium, tantalum, tungsten, osmium, iridium, or platinum. The three elements may account for at least 70 at % of the amorphous thin film stack. The stack can further include a second layer formed on a surface of the first layer. The second layer can be an oxide layer, a nitride layer, or a combination thereof. The second layer can have an average thickness of 10 angstroms to 200 microns and a thickness variance no greater than 15% of the average thickness of the second layer.

公开(公告)号：US12270820B2

公开(公告)日：2025-04-08

申请号：US17044996

申请日：2018-06-04

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Jeffrey A. Nielsen ,  Christie Dudenhoefer ,  Debora J. Thomas ,  Roberto A Pugliese ,  Diane R. Hammerstad

IPC: G01N35/10 ,  B01L3/00 ,  B01L3/02

Abstract: In one example in accordance with the present disclosure, a fluidic die is described. The fluidic die includes a plurality of ejection subassemblies. Each ejection subassembly includes an ejection chamber to hold a volume of fluid and an opening through which the volume of fluid is ejected via a fluid actuator. A pitch of the ejection subassemblies aligns with a spatial arrangement of nanowells in an array of nanowells on a substrate.

公开(公告)号：US11279129B2

公开(公告)日：2022-03-22

申请号：US16067945

申请日：2016-06-24

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  The State of Oregon State Board of Higher Education on behalf of Oregon State University

Inventor： James Elmer Abbott, Jr. ,  John M McGlone ,  Kristopher Olsen ,  Douglas A Keszler ,  John Wager ,  Roberto A Pugliese ,  William F Stickle ,  Greg Scott Long

IPC: B41J2/14 ,  C22C45/00 ,  H01B1/02 ,  C23C14/14 ,  H01B5/02 ,  B32B15/00

Abstract: An amorphous thin metal film can comprise a combination of three metals or metalloids including: 5 at % to 90 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 90 at % of a first metal selected from the group of titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, and platinum; and 1 at % to 90 at % of cerium. The three elements may account for at least 50 at % of the amorphous thin metal film.

公开(公告)号：US20200270742A1

公开(公告)日：2020-08-27

申请号：US16067945

申请日：2016-06-24

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  The State of Oregon State Board of Higher Education on behalf of Oregon State University

Inventor： James Elmer Abbott, Jr. ,  John M McGlone ,  Kristopher Olsen ,  Douglas A Keszler ,  John Wager ,  Roberto A Pugliese ,  William F Stickle ,  Greg Scott Long

IPC: C23C14/14 ,  C22C45/00 ,  C23C14/34 ,  B41J2/14

Abstract: An amorphous thin metal film can comprise a combination of three metals or metalloids including: 5 at % to 90 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 90 at % of a first metal selected from the group of titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, and platinum; and 1 at % to 90 at % of cerium. The three elements may account for at least 50 at % of the amorphous thin metal film.

公开(公告)号：US10532571B2

公开(公告)日：2020-01-14

申请号：US15544999

申请日：2015-03-12

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Zhizhang Chen ,  James Elmer Abbott, Jr. ,  Michael W Cumbie ,  Roberto A Pugliese

IPC: B41J2/14 ,  B41J2/16

Abstract: In one example, a printhead structure includes an ejector element, a multi-layer insulator covering the ejector element, and an amorphous metal on the insulator.