公开(公告)号：WO2016175742A1

公开(公告)日：2016-11-03

申请号：PCT/US2015/027767

申请日：2015-04-27

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P..

Inventor： GE, Ning ,  LI, Zhiyong ,  YANG, Jianhua ,  WILLIAMS, Stanley

IPC: H01L21/027 ,  H01L27/108

CPC classification number: G03F7/16 ,  B41J2/04541 ,  B41J2/04543 ,  B41J2/0458 ,  B41J2/14129 ,  B41J2202/13 ,  G11C13/0007 ,  G11C13/0023 ,  G11C13/0069 ,  G11C19/28 ,  G11C2213/15 ,  G11C2213/31 ,  G11C2213/32 ,  H01L27/10817 ,  H01L27/2436 ,  H01L27/2463 ,  H01L28/87 ,  H01L28/91 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1675 ,  H01L45/1683

Abstract: An integrated circuit may include a substrate with a plurality of transistors formed in the substrate. The plurality of transistors may be coupled to a first metal layer formed over the plurality of transistors. A plurality of high dielectric nanometer capacitors may be formed of memristor switch material between the first metal layer and a second metal layer formed over the plurality of high dielectric capacitors. The plurality of high dielectric capacitors may operate as memory storage cells in dynamic logic.

Abstract translation: 集成电路可以包括在衬底中形成有多个晶体管的衬底。 多个晶体管可以耦合到形成在多个晶体管上的第一金属层。 多个高介电纳米电容器可以由在第一金属层和形成在多个高介电电容器上的第二金属层之间的忆阻开关材料形成。 多个高介电电容器可以作为动态逻辑中的存储器存储单元来操作。

公开(公告)号：WO2011014172A1

公开(公告)日：2011-02-03

申请号：PCT/US2009/052255

申请日：2009-07-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  YANG, Jianhua ,  WANG, Shih-yuan ,  WILLIAMS, Stanley ,  BRATKOVSKI, Alexandre ,  RIBEIRO, Gilberto

Inventor： YANG, Jianhua ,  WANG, Shih-yuan ,  WILLIAMS, Stanley ,  BRATKOVSKI, Alexandre ,  RIBEIRO, Gilberto

IPC: H01L29/40

CPC classification number: H01L29/417 ,  B82Y10/00 ,  H01L27/101 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

Abstract: A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less.

Abstract translation: 构造纳米级开关器件，使得不需要电铸工艺来调节器件以进行正常的开关操作。 开关装置具有设置在两个电极之间的有源区域。 有源区具有由能够在电场下输送掺杂剂的开关材料形成的至少一个开关层，以及由掺杂剂源材料形成的至少一个导电层，所述掺杂剂源材料含有可在电场下漂移到开关层中的掺杂剂。 开关层的厚度为6nm以下。

公开(公告)号：WO2010085282A1

公开(公告)日：2010-07-29

申请号：PCT/US2009/052250

申请日：2009-07-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  YANG, Jianhua ,  WILLIAMS, Stanley ,  BORGHETTI, Julien ,  STRACHAN, John Paul

Inventor： YANG, Jianhua ,  WILLIAMS, Stanley ,  BORGHETTI, Julien ,  STRACHAN, John Paul

IPC: H01H1/02

CPC classification number: G11C13/0007 ,  G11C13/003 ,  G11C2213/31 ,  G11C2213/51 ,  G11C2213/55 ,  G11C2213/56 ,  G11C2213/72 ,  G11C2213/73 ,  G11C2213/74 ,  H01L27/2463 ,  H01L29/8615 ,  H01L45/08 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

Abstract: A nanoscale switching device provides enhanced thermal stability and endurance to switching cycles. The switching device has an active region disposed between electrodes and containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field. At least one of the electrodes is formed of conductive material having a melting point greater than 1800 °C.

Abstract translation: 纳米尺度开关器件提供了对开关周期的增强的热稳定性和耐久性。 开关器件具有设置在电极之间的有源区，并且包含能够承载一种掺杂剂并在电场下输送掺杂剂的开关材料。 至少一个电极由熔点大于1800℃的导电材料形成。