公开(公告)号：US20240014010A1

公开(公告)日：2024-01-11

申请号：US17763301

申请日：2021-02-19

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Tetsuo KAWANABE ,  Makoto SATAKE ,  Motohiro TANAKA

IPC: H01J37/32

CPC classification number: H01J37/32247 ,  H01J37/32229 ,  H01J37/3244 ,  H01J37/32201 ,  H01J2237/3343 ,  H01L21/67069

Abstract: A plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing, including, at an upper side therein, a dielectric plate, through which microwaves are transmitted; a radio frequency power supply which supplies radio frequency power for the microwaves; a cavity resonator which resonates microwaves transmitted from the radio frequency power supply through a waveguide and is placed above the dielectric plate; and a magnetic field forming mechanism which forms a magnetic field in the processing chamber. The plasma processing apparatus further includes: a ring-shaped conductor placed inside the cavity resonator; and a circular conductor which is placed inside the cavity resonator and placed in an opening at the center of the ring-shaped conductor.