公开(公告)号：JP2002313273A

公开(公告)日：2002-10-25

申请号：JP2001117607

申请日：2001-04-17

Applicant: HITACHI LTD

Inventor： OSHIMA TAKU ,  TODOKORO HIDEO ,  SHINADA HIROYUKI ,  FUKUHARA SATORU ,  NOZOE MARI

IPC: H01J37/073 ,  H01J37/28

Abstract: PROBLEM TO BE SOLVED: To constitute an electron microscope that has a high resolution at a low acceleration voltage, without impressing large retarding or boosting voltage. SOLUTION: A photocathode having a good monochromaticity is used as an electron source.

公开(公告)号：JPH08339773A

公开(公告)日：1996-12-24

申请号：JP14288795

申请日：1995-06-09

Applicant: HITACHI LTD

Inventor： KAWANAMI YOSHIMI ,  OSHIMA TAKU ,  HOSOKI SHIGEYUKI ,  HAYATA YASUNARI

IPC: H01J37/073

Abstract: PURPOSE: To radiate stably for a long time an electron beam of small energy dispersion. CONSTITUTION: By making a thin film electrode 2, given positive potential relating to a needle-shaped electrode 1 by a gap electrode 5, approach a tip end of the needle-shaped electrode 1 by a gap drive mechanism 3, an electron (conductive electron) in the inside of the needle-shaped electrode 1 is made tunneling to the thin film electrode 2, further to emit an electron 4, having specific energy of the electron, into vacuum from the thin film electrode 2. By only applying a potential difference of several volts between the needle- shaped electrode and the thin film electrode, emission of an electron from the needle-shaped electrode can be performed without receiving an influence of ion impact, and further by tunneling the emitted electron to the thin film electrode, an electron beam can be formed by only an electron having desired energy.

公开(公告)号：JPH08222163A

公开(公告)日：1996-08-30

申请号：JP19830195

申请日：1995-08-03

Applicant: HITACHI LTD

Inventor： SHINADA HIROYUKI ,  KURODA KATSUHIRO ,  OSHIMA TAKU ,  FUKUHARA SATORU ,  KIMURA SHINGO

IPC: H01J9/02 ,  H01J1/30 ,  H01J1/304 ,  H01J37/06 ,  H01J37/073

Abstract: PURPOSE: To provide an electron source having an energy width in the prescribed range and capable of stably emitting electrons for a long period by setting the radius of curvature of the tip of the electron source to a specific size. CONSTITUTION: This Schottky electron source is adsorbed at the tip of a needle- like crystal of zirconium and oxygen W . The radius of curvature of the flat face at the tip of a high-melting point metal monocrystal wire 1 fitted to the tip of a filament 2 is set to 1.1-2.57μm at the intersection of the curve indicating the relation between the equilibrium field intensity that the surface diffusion and electrostatic force are balanced and the radius of curvature of the tip and the curve indicating the relation between the field intensity that the extracted electron energy width becomes 0.5eV and the radius of curvature. Even when the electric field capable of maintaining a facet is applied, electrons can be emitted at a narrow energy width, and stable and high-quality electrons can be emitted for a long period.

公开(公告)号：JPH07235277A

公开(公告)日：1995-09-05

申请号：JP2506694

申请日：1994-02-23

Applicant: HITACHI LTD

Inventor： SHINADA HIROYUKI ,  OSHIMA TAKU ,  SASAKI SUSUMU ,  KURODA KATSUHIRO ,  SUZUKI MUTSUZOU ,  KUSUNOKI TOSHIAKI ,  YAGUCHI TOMIO ,  OSHIMA TETSUYA ,  HAYASHI NOBUAKI

IPC: G01R31/302 ,  H01J1/30 ,  H01J37/073 ,  H01J37/244 ,  H01J37/28 ,  H01L21/66

Abstract: PURPOSE:To improve high frequency property with noncontact and besides, make possible the inspection of the signals from many electrodes at the same time by providing this probe card with an electrode which has a detector for detecting the secondary electrons generated from a sample when the sample is irradiated with electron beams. CONSTITUTION:For an LS1 being the object of inspection, many bonding pads 2 are arranged at the periphery. An electron beam probe card 3 is equipped with electron beam probe units 4 being arranged at the same intervals with the pads 2 and is brought close to cover the pad 2. When the pad 2 is irradiated with the electrons 11 from the electron emission element 5 of the unit 4, the generated secondary electrons 12 are detected with a secondary electron detecting electrode 7, after being analyzed by a retarding electrode 10 operating as an energy filter. These signals are taken out through a signal line 40, being separated for every unit 4, and many point simultaneous measurement can be made with noncontact.

公开(公告)号：JPH07220662A

公开(公告)日：1995-08-18

申请号：JP813894

申请日：1994-01-28

Applicant: HITACHI LTD

Inventor： YAGUCHI TOMIO ,  OSHIMA TETSUYA ,  SHINADA HIROYUKI ,  SASAKI SUSUMU ,  OSHIMA TAKU ,  SUZUKI MUTSUZOU ,  KUSUNOKI TOSHIAKI ,  KURODA KATSUHIRO ,  HAYASHI NOBUAKI

IPC: H01J29/86 ,  H01J31/12

Abstract: PURPOSE:To prevent panels from bending inward when pressure is reduced from the inside by forming a curved surface where an atmosphere side surface of a surface panel or a reverse panel becomes a projecting surface, and making compressive force act in the surface inside direction of the panel being the projecting surf ace. CONSTITUTION:An image display element has a fine field emission 77 electron beam source mainly composed of molybdenum mainly on a glass plate surface, a reverse panel 1 where a grid electrode to impress an electric field on this is formed on a surface and a surface panel 3 where a transparent electrode by tin oxide and a fluorescent screen 2 are formed on the glass plate surface, and is composed of a side plate 4 to maintain an interval between both panels and also to maintain airtightness and a tension band 5 running along the side plate 4 so as to surround both panels. An electron coming out of the electron beam source on the reverse panel 1 excites a fluorescent film formed on an inside surface of the surface panel 3, and an image is displayed.

公开(公告)号：JPH06188203A

公开(公告)日：1994-07-08

申请号：JP33998392

申请日：1992-12-21

Applicant: HITACHI LTD

Inventor： IRIE RYOTARO ,  OSHIMA TAKU ,  HIRUMA TAKEYUKI ,  FUJISAKI YOSHIHISA ,  ONO TETSUO

IPC: C23C16/44 ,  C23C16/46 ,  H01L21/205

Abstract: PURPOSE:To provide the crystal growth device capable of rapidly growing a needlelike crystal used for the semiconductor device using the quantum effect due to one-dimensional confinement of electrons. CONSTITUTION:A light source having lower photoquantum energy than that of the band gap of a substrate base (102) is provided inside a specimen holder of the title crystal growing device i.e., on the rear side of the substrate to irradiate the substrate during the crystal growth time. These beams reaching the growing surface (upper side surface of 102) are absorbed into a dimer in a part (needlelike crystal growth region) of the surface. As the results of the photoabsorption, the dimer is decomposed to produce a dangling bond while activating the surface. Here, a light irradiation window (103) is inside a specimen holder with the transmitted light intensity not decreased due to any contamination, so that a gaseous raw material may be reacted and deposited on the needlelike crystal region thereby enabling the needlelike crystal to be manufactured rapidly and continuously. Accordingly, the needlelike crystal can be grown rapidly, stably and continuously at relatively low temperature.

公开(公告)号：JPH04118926A

公开(公告)日：1992-04-20

申请号：JP23696390

申请日：1990-09-10

Applicant: HITACHI LTD

Inventor： NAKAMURA NOBUO ,  OSHIMA TAKU ,  NAKAGAWA KIYOKAZU ,  MIYAO MASANOBU

IPC: H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L29/80

Abstract: PURPOSE:To process a single-crystal silicide and silicon fine and with high accuracy by a method wherein, after the single-crystal silicide has been grown on a silicon substrate, the silicide is processed by using a photoresist method and, in succession, the silicide is processed fine by using an anisotropic etching operation. CONSTITUTION:Single crystal NiSi2 6 is grown on an Si (111) substrate 1. A resist film 3 having a desired PBT pattern is formed on the Si substrate 1 by using a photoresist method; the inessential NiSi2 is removed. After that, the resist film 3 is stripped; the surface is cleaned; a gate pattern of NiSi2 is formed; an anisotropic etching operation is executed; the crystal plane orientation of the sidewall of a silicide which is etched anisotropically and chemically is changed to (110). Thereby, both a thin-line shape and a cross-sectional shape are changed to rectangular shapes. Then, an anisotropic dry etching operation is executed by making use of the NiSi2 as a mask; the Si substrate is etched. This specimen is put again into an ultrahigh vacuum apparatus; the single- crystal NiSi2 is grown; a half-buried type PBT is manufactured.

公开(公告)号：JPH03163885A

公开(公告)日：1991-07-15

申请号：JP30211289

申请日：1989-11-22

Applicant: HITACHI LTD

Inventor： MIYAO MASANOBU ,  OSHIMA TAKU ,  NAKAGAWA KIYOKAZU ,  NAKAMURA NOBUO ,  MURAKAMI HIDEKAZU ,  ETO HIROYUKI

IPC: H01L39/22 ,  H01L39/24

Abstract: PURPOSE:To fine a channel layer down to the level of an atomic layer by forming the double hetero-structure of a superconductor/a semiconductor/the superconductor onto the semiconductor, using these superconductors as a source and a drain and employing a space between these source and drain as a channel. CONSTITUTION:A substrate 1 is composed of single crystal Si having a P-type (100) face, and a superconductor 2, single-crystal Si 3 and the superconductor 2 are hetero epitaxial grown successively onto the single crystal Si substrate 1. A region 4 for extracting a source electrode 10, a region 6, in which a gate electrode 11 is shaped, a region 5 isolating an active layer and a region 7, in which a drain electrode 12 is formed, are bored. An SiO2 film 8 is shaped onto the whole surface, and the gate oxide film 8 is shaped only to the peripheral section of the region 6, in which the gate electrode 11 is formed, finally. A thick SiO2 film 9 is formed in the regions 5 and 7 in order to isolate the active region of an element, and the source, gate and drain electrodes 10-12 are shaped onto the regions 4, 6, 7. Accordingly, a channel layer can be fined down to the level of an atomic layer.

公开(公告)号：JPS63259915A

公开(公告)日：1988-10-27

申请号：JP9302987

申请日：1987-04-17

Applicant: HITACHI LTD

Inventor： MORI MITSUHIRO ,  KATSUYAMA TOSHIO ,  KURODA TAKARO ,  OSHIMA TAKU

IPC: B28B1/00 ,  H01B12/04 ,  H01B13/00

Abstract: PURPOSE:To facilitate manufacture of wire material of superconductive wire, make processability of the wire material good and prevent time-based deterioration of superconductive characteristics by disposing glass material tightly attached on the outer side of ceramic-based superconductive matter. CONSTITUTION:Particles of oxide of each of Ba, La, Cu are packed in the inside of a quartz glass tube 1 to be material 2 for ceramic-based superconductive matter. The quartz tube 1 and the material 2 are heated to be fused in an electric furnace 3 to be formed into a glass rod, which is then drawn into fiber of a predetermined diameter at a predetermined temperature. The material 2 is changed into ceramic-based superconductive matter 4 by processing and heat treatment in this process. Decomposition and external emission of perovskite structure are restricted by a quartz glass film 5, and time-based deterioration of the wire material is prevented, while manufacture of the superconductive wire material is facilitated.

公开(公告)号：JPS63248009A

公开(公告)日：1988-10-14

申请号：JP8092287

申请日：1987-04-03

Applicant: HITACHI LTD

Inventor： MORI MITSUHIRO ,  OSHIMA TAKU ,  KURODA TAKARO

IPC: B28B1/00 ,  H01B12/04 ,  H01B13/00

Abstract: PURPOSE:To obtain a superconductive wire easy to form and excellent in the machining property and prevent the wire rod from being broken by a quenching phenomenon by arranging a metal material in close contact with the outside of a ceramic superconductive material. CONSTITUTION:The powder for the raw material 2 of a ceramic superconductive material is put in a metal pipe 1. Next, the plastic machining such as the wire drawing is applied to the metal pipe 1, the wire rod is machined and heat- treated, the inside raw material powder is sintered to form the ceramic superconductive material 4. Therefore, the powder of the raw material 2 packed in the metal pipe 1 can be densely filled because the inner diameter of the metal pipe 1 is shrunk during the wire drawing process of the metal pipe 1, and a superconductive wire with the desired diameter can be easily obtained by the wire drawing process. Accordingly, the fragile and hard ceramic superconductive wire can be easily machined into the desired shape, and the ceramic superconductive wire can be prevented from being broken by the Joule's heat caused by a quenching phenomenon.