公开(公告)号：JPH06310069A

公开(公告)日：1994-11-04

申请号：JP9410093

申请日：1993-04-21

Applicant: HITACHI LTD

Inventor： UKIANA MOTOHIDE ,  NAMIKAWA YOSHIHISA ,  ASAYAMA MASAICHIRO ,  TAMURA MASASHI

IPC: H01J37/20 ,  H01J37/26

Abstract: PURPOSE:To observe inside electric potential distribution or electric field strength distribution by impressing voltage upon a semiconductor sample of a thin film. CONSTITUTION:An insulating layer is formed on a surface of a sample stand, and a metallic plate 6 to which fine work is applied by etching is adhered on it. A semiconductor sample 10 having a voltage terminal is loaded on the sample stand, and when it is pressed down by a ring spring 12, the voltage terminal of the semiconductor sample 10 and a voltage terminal of the metallic plate 6 are continued electrically to each other, and when electric power is supplied to a cord 18, voltage is impressed upon the semiconductor sample. Thereby, the thin film semiconductor sample having the voltage terminal can be loaded on the sample stand by simple handling, and when the voltage is impressed upon the semiconductor sample, electric potential distribution or electric field strength distribution can be observed.

公开(公告)号：JPS5623757A

公开(公告)日：1981-03-06

申请号：JP9728979

申请日：1979-08-01

Applicant: HITACHI LTD

Inventor： TANAKA MASASHI ,  KIHARA TOSHIMASA ,  NAGASHIMA NAOYUKI ,  TAMURA MASASHI

IPC: H01L23/02 ,  H01L23/58

Abstract: PURPOSE:To prevent variation of the content of a memory and erroneous operation of a semiconductor elements in a semiconductor device by forming partly the package forming member of the region on a semiconductor chip as a light transmitting conductive film. CONSTITUTION:A light transmitting material conductive film 7 such as, for example, SnO2 is formed on the upper surface of a transparent lid on the upper portion of a package 2. Since the insulating lid becomes entirely equal potential even if the lid is charged in this configuration, no erroneous operation occurs in the ROM so as to improve the reliability.

公开(公告)号：JPS5585040A

公开(公告)日：1980-06-26

申请号：JP15744278

申请日：1978-12-22

Applicant: HITACHI LTD

Inventor： TAMURA MASASHI ,  NAGASHIMA NAOYUKI

IPC: H01L21/3205 ,  H01L21/28 ,  H01L29/40

Abstract: PURPOSE:To remove charge stored on a surface of an insulating film causing the deterioration of electric characteristics, by a method wherein charged particle beam is irradiated onto a surface of a film of a compound, and only one element forming the compound of the film is left on the surface. CONSTITUTION:A silicon oxide film 1 as a final passivation film is made up on an upper surface of substance, etc., which are manufactured by building up a MOSFET to a silicon wafer 4, by means of a CVD method, etc., a silicon oxide of a surface portion of the silicon oxide film 1 is decomposed by irradiating electron beams 2 on the whole surface, and a thin-film 3 in simple silicon is formed on the surface. A conductive thin-film is made up by adding impurities, such as, phosphor, boron, etc. to the thin-film 3 as necessary so that charge on a surface of an insulating film is discharged. Si3N4, Al2O3, etc. may be used as a material of a compound of the insulating film, and laser beam may be employed as instead of charged particle beam.

公开(公告)号：JPS5258586A

公开(公告)日：1977-05-14

申请号：JP13406975

申请日：1975-11-10

Applicant: HITACHI LTD

Inventor： SHINODA TOSHIMITSU ,  TAMURA MASASHI

IPC: G01N23/225 ,  G01N27/62

Abstract: PURPOSE:To facilitate positioning of specimen radiating surface and incresae secondary ion capturing efficiency in a mass analyzer by providing a plurality of sample rest faces having the same inclination to the central axis of a column body made of metal.

公开(公告)号：JPS61168917A

公开(公告)日：1986-07-30

申请号：JP901785

申请日：1985-01-23

Applicant: HITACHI LTD

Inventor： KURODA KENICHI ,  NAGAO MAKI ,  TAMURA MASASHI

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To facilitate manufacture of a mask, by forming a surface pattern by using a material, which can perform Bragg reflection against exposing light rays, and a material, which does not perform effective Bragg reflection, and constituting the mask. CONSTITUTION:An X-ray source 3 projects X rays 4 on the entire surface of a mask 2 at an Bragg angle thetaB. A supporting part 6 has a movable table 7, which can be moved in the up and down directions by changing an angle thetaS. A silicon wafer 5 is supported on the surface facing downward. An X-ray resist layer 8 is formed on the surface of the silicon wafer 5. A pattern layer 10 is formed on the mask 2 by a material, which does not substantially perform Bragg reflection against the X rays 4 in such a manner that the X rays are absorbed by the surface of a substrate 9, which can perform the Bragg reflection. The pattern layer 10 can be formed by intactly utilizing conventional lithography technology. Therefore, the mask 2 can be manufactured very easily. Since the mask 2 is formed on the thick substrate 9, the mask is not deformed, and the shape of the pattern can be maintained excellently.

公开(公告)号：JPS5984157A

公开(公告)日：1984-05-15

申请号：JP19471182

申请日：1982-11-08

Applicant: HITACHI MICROCUMPUTER ENG ,  HITACHI LTD

Inventor： TSUCHIMOTO MICHIKO ,  DOI HIROSHI ,  TAMURA MASASHI

IPC: G01N31/00 ,  G01N31/22 ,  G01N33/20 ,  H01L23/02

Abstract: PURPOSE:To detect simply and quickly the content of uranium U and thorium Th by separating U and Th from a raw material and concentrating the same then adding reagents and detecting said content from the color reaction thereof. CONSTITUTION:A sample is first pretreated and thereafter various chemicals are added and the sample is dissolved or melted to prepare an aq. soln. When such soln. is passed through a sulfuric acid type ion exchange resin, only the U and Th are held in said resin. Four kinds of reagents (thorin, neothron, morin, Alizarin Reds) are dropped to the extracted U, Th, then the reagent liquid forms various colors according to the difference in the amt. of the chelate compd. formed owing to a difference in the content of U and Th. The degree of the above-mentioned color reaction is compared with the coloration degree of a soln. having a standard concn., whereby the content of the U and Th is detected.