Abstract:
A Delta-Sigma Analog-to-Digital Converter (ADC) that can have a very high sampling rate (over 100 GHz) and which is preferably optically sampled to help achieve its very high sampling rate. The sampling rate can be many times higher than the regeneration speed of the electronic quantizers used in the ADC.
Abstract:
A solder bump structure and a method for fabrication of a solder bump, comprising applying preferably an insulating film, followed by applying a multilayer underbump metallization, a layer of a photoresist, and a thin layer of titanium or chrome, or Ti-Ni-Ti, Ti-Ni-Cr, Ti-Pt-Ti, or Ti-Ni-SiOX deposited over or under said underbump metallization, on a substrate containing, preferably, III-V semiconductor circuits and removing said thin layer in a region spaced from said underbump metallization.
Abstract:
A limiter for limiting selected frequency components by generating Stokes waves in a stimulated Brillouin scattering medium. The generated Stokes waves create a seed that is provided to another stimulated Brillouin scattering medium. The seed selecting the undesired frequency components to be attenuated.
Abstract:
A waveform synthesizer comprising for synthesizing RF lightwave waveforms in the optical domain. These waveforms are constructed by generating their constituent Fourier frequency components or tones and then adjusting the amplitudes of those frequency components or tones. The apparatus includes: a RF-lightwave frequency-comb generator; and a multi-tone, frequency selective amplitude modulator coupled to the RF-lightwave frequency-comb generator for generating a continuous-wave comb comprising a set of RF tones amplitude modulated onto a lightwave carrier.
Abstract:
Optical bond-wire interconnections between microelectronic chips, wherein optical wires are bonded onto microelectronic chips. Such optical connections offer numerous advantages compared to traditional electrical connections. Among other things, these interconnections are insensitive to electromagnetic interference and need not be located at the edges of a chip but rather can be placed for optimal utility to the circuit function. In addition, such interconnections can be given the same or other pre-specified lengths regardless of the placement in the module and they are capable of signal bandwidths up to 20 Gigahertz without causing a cross-talk problem. A method of fabrication of such optical interconnections using optical fiber, a laser or photodetector and etched mirror and etched V-shaped grooves.
Abstract:
A laser system and method for self-injection locking. The system includes a laser (10) having a laser output at a frequency wo. An optical port (14) provides a portion of the laser output at the port and a modulator (16), coupled to the port, is driven by a RF signal at a frequency wm generates two sidebands at wo Ò wm. A filter (18) passes one of the two sidebands; and an optical path (20) couples an output of the filter to the laser for injection locking.
Abstract:
A solder bump structure for use on a substrate. The solder bump structure includes a multilayer underbump metallization having a major upper surface with a solder wetable caplayer for contacting a solder bump, the mutilayer underbump metallization projecting from the substrate with an exposed sidewall; a thin layer of a metal selected from a group consisting of titanium, chrome, a titanium-nickel-titanium composite, a titanium-nickel-chrome composite, a titanium-platinum-titanium alloy, and a titanium-nickel-oxidized silicon composite deposited over or under the multilayer underbump metallization and covering the exposed sidewall of the multilayer underbump metallization.