公开(公告)号：WO1994017548A1

公开(公告)日：1994-08-04

申请号：PCT/US1994000371

申请日：1994-01-10

Applicant: HUGHES AIRCRAFT COMPANY

Inventor： HUGHES AIRCRAFT COMPANY ,  PINTER, Jerald, F.

IPC: H01L21/48

CPC classification number: H01L21/76251 ,  H01L21/76898 ,  Y10S148/135 ,  Y10S148/164 ,  Y10S438/928 ,  Y10S438/973

Abstract: An interconnect layer (40) for interposing between two active circuit layers of a multi-chip module (50). The interconnect layer includes a layer of silicon (14) having first surface and second surfaces. A first layer of dielectric material (16) is disposed over the first surface and a second layer of dielectric material (12) disposed over the second surface. The interconnect layer includes at least one electrically conductive feedthrough (42) that is formed within an opening made through the layer of silicon. The opening has sidewalls (22) that are coated with a dielectric material (24) and an electrically conductive material for providing a topside contact (26). A second contact (28) is formed from the backside of the silicon layer after removing the substrate (10). In accordance with the invention, the sidewalls have a slope associated therewith such that an area of the opening is larger at the first surface of the silicon layer than at the second surface of the silicon layer, thereby improving the contact metal step coverage. The silicon layer is comprised of silicon and has a thickness in the range of approximately 10 micrometers to approximately 50 micrometers. The opening is etched through the silicon layer with KOH to provide an inwardly sloping sidewall profile having an angle that is approximately equal to 54.7 degrees.

Abstract translation: 一种用于插入多芯片模块（50）的两个有源电路层之间的互连层（40）。 互连层包括具有第一表面和第二表面的硅层（14）。 电介质材料（16）的第一层设置在第一表面上方，第二层介电材料（12）设置在第二表面之上。 互连层包括形成在通过硅层制成的开口内的至少一个导电馈通（42）。 开口具有涂覆有电介质材料（24）的侧壁（22）和用于提供顶侧触点（26）的导电材料。 在去除衬底（10）之后，从硅层的背面形成第二接触（28）。 根据本发明，侧壁具有与其相关联的斜面，使得在硅层的第一表面处的开口面积大于在硅层的第二表面处的面积，从而改善接触金属台阶覆盖。 硅层由<100>硅组成，其厚度在约10微米至约50微米的范围内。 用KOH将开口蚀刻通过<100>硅层，以提供具有大致等于54.7度的角度的向内倾斜的侧壁轮廓。