公开(公告)号：WO1989002094A1

公开(公告)日：1989-03-09

申请号：PCT/US1988002912

申请日：1988-08-23

Applicant: HUGHES AIRCRAFT COMPANY

Inventor： HUGHES AIRCRAFT COMPANY ,  STERLING, Rodney, D.

IPC: G02F01/135

CPC classification number: G02F1/135

Abstract: An LCLV device exhibiting improved performance capabilities fabricated using an amorphous silicon photoconductor layer (13), a cadmium telluride blocking layer (17), a titanium dioxide mirror (19) and a special bonding layer (15) which enables attachment of the cadmium telluride blocking layer (17) to the amorphous silicon (13). The bonding layer (15) includes silicon dioxide sputtered in successive argon and argon/oxygen atmospheres followed by cadmium telluride sputtered in successive argon/oxygen and argon atmospheres. The bonding layer (15) may also be used in other applications to bond a cadmium telluride layer to single crystal silicon or silicon dioxide layers.

Abstract translation: 使用非晶硅光电导体层（13），碲化镉阻挡层（17），二氧化钛反射镜（19）和特殊接合层（15）制造的改进的性能能力的LCLV器件能够附着碲化镉屏蔽 层（17）到非晶硅（13）。 接合层（15）包括在连续的氩气和氩/氧气氛中溅射的二氧化硅，随后在连续的氩气/氧气和氩气气氛中溅射碲化镉。 结合层（15）也可以用于其它应用中，以将碲化镉层结合到单晶硅或二氧化硅层。

公开(公告)号：EP0376982A1

公开(公告)日：1990-07-11

申请号：EP88909173.0

申请日：1988-08-23

Applicant: Hughes Aircraft Company

Inventor： STERLING, Rodney, D.

IPC: G02B5 ,  G02F1

CPC classification number: G02F1/135

Abstract: An LCLV device exhibiting improved performance capabilities fabricated using an amorphous silicon photocon­ ductor layer (13), a cadmium telluride blocking layer (17), a titanium dioxide mirror (19) and a special bonding layer (15) which enables attachment of the cadmium telluride blocking layer (17) to the amorphous silicon (13). The bonding layer (15) includes silicon dioxide sputtered in successive argon and argon/oxygen atmospheres followed by cadmium telluride sputtered in successive argon/oxygen and argon atmospheres. The bonding layer (15) may also be used in other applica­ tions to bond a cadmium telluride layer to single crystal silicon or silicon dioxide layers.