公开(公告)号：WO1989002654A1

公开(公告)日：1989-03-23

申请号：PCT/US1988003101

申请日：1988-08-30

Applicant: HUGHES AIRCRAFT COMPANY

Inventor： HUGHES AIRCRAFT COMPANY ,  SCHULMAN, Joel, N. ,  WALDNER, Michael ,  STANCHINA, William, E. ,  ANDERSON, Carl, L.

IPC: H01L29/76

Abstract: A three-terminal device which exploits the resonant tunneling of carriers is disclosed, with resonant tunneling through higher energy levels in a central quantum well for high speed operation. The new type of unipolar transistor has a base region consisting of the quantum well with reduced base resistance. The second highest subband is used for electron tunneling, thereby reserving the lower subband for a high electron carrier density which lowers the base resistance. The base is undoped to reduce impurity scattering. In a preferred embodiment the double-barrier structure is Ga1-y' Aly' As-Ga1-xAlxAs-GaAs-Ga1-xAlyAs-Ga1-yAlyAs. Alternative embodiments of the invention make use of other III-V or II-VI materials, such as InGaAs-GaAs-GaAlAs (with InGaAs as the well), or HgTe-CdTe. Since the lowest level is always populated, the GaAs well will be conductive, making it feasible to modulate the base region.

公开(公告)号：EP0333851A1

公开(公告)日：1989-09-27

申请号：EP88910305.0

申请日：1988-08-30

Applicant: Hughes Aircraft Company

Inventor： SCHULMAN, Joel, N. ,  WALDNER, Michael ,  STANCHINA, William, E. ,  ANDERSON, Carl, L.

IPC: H01L29 ,  H01L21