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公开(公告)号：US20050035354A1
公开(公告)日：2005-02-17
申请号：US10641641
申请日：2003-08-14
Applicant: Hui-Li Lin , Qinghong Du , Ho-Shang Lee
Inventor： Hui-Li Lin , Qinghong Du , Ho-Shang Lee
Abstract: A light-emitting diode (LED) for both AlGaInP- and GaN-based materials needs a good transparent current spreading layer to disseminate electrons or holes from the electrode to the active layer. The present invention utilizes a conductive and transparent ITO (Indium Tin Oxide) thin film with an ultra-thin (to minimize the absorption) composite metallic layer to serve as a good ohmic contact and current spreading layer. The present invention avoids the Schottky contact due to direct deposition of ITO on the semiconductor. For AlGaInP materials, a thick GaP current spreading layer is omitted by the present invention. For GaN-based LEDs with the present invention, semi-transparent Ni/Au contact layer is avoided. Therefore, the light extraction of LED can be dramatically improved by the present invention. Holes may be etched into the semiconductor cladding layer forming a Photonic Band Gap structure to improve LED light extraction.
Abstract translation: 用于AlGaInP和GaN基材料的发光二极管（LED）需要良好的透明电流扩散层，以将电极或空穴从电极传播到有源层。 本发明利用具有超薄（使吸收最小化）复合金属层的导电和透明ITO（氧化铟锡）薄膜作为良好的欧姆接触电流扩展层。 本发明避免了由于在半导体上直接沉积ITO引起的肖特基接触。 对于AlGaInP材料，本发明省略了厚GaP电流扩散层。 对于本发明的GaN系LED，可以避免半透明的Ni / Au接触层。 因此，通过本发明可以显着提高LED的光提取。 可以将孔蚀刻到形成光子带隙结构的半导体包层中以改善LED光提取。
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公开(公告)号：US08966780B2
公开(公告)日：2015-03-03
申请号：US12857078
申请日：2010-08-16
Applicant: Hui-Li Lin
Inventor： Hui-Li Lin
CPC classification number: D06F58/02 , D06F58/20 , D06F58/28 , D06F2058/2854
Abstract: A tumble dryer includes a housing, which has an enclosable drying chamber, a heater mounted in the enclosable drying chamber, a gate for closing/opening the enclosable drying chamber and a tumbler rotatably mounted in the drying chamber, an intake pipeline equipped with an intake control valve for guiding outside air into the drying chamber, an exhaust pipeline equipped with an exhaust control valve for guiding air out of the drying chamber to the atmosphere, an air-suction pipeline equipped with a pipeline control valve and having a pump installed therein for pumping air out of the drying chamber to the atmosphere.
Abstract translation: 滚筒式干燥机包括壳体，其具有可封闭的干燥室，安装在可封闭干燥室中的加热器，用于封闭/打开可封闭干燥室的门和可旋转地安装在干燥室中的滚筒，配备有进气口的进气管道 用于将外部空气引导到干燥室中的控制阀，配备有用于将空气从干燥室引导到大气的排气控制阀的排气管道，配备有管道控制阀并具有安装在其中的泵的吸气管路， 将空气从干燥室抽出到大气中。
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公开(公告)号：US06958494B2
公开(公告)日：2005-10-25
申请号：US10641641
申请日：2003-08-14
Applicant: Hui-Li Lin , Qinghong Du , Ho-Shang Lee
Inventor： Hui-Li Lin , Qinghong Du , Ho-Shang Lee
Abstract: A light-emitting diode (LED) for both AlGaInP- and GaN-based materials needs a good transparent current spreading layer to disseminate electrons or holes from the electrode to the active layer. The present invention utilizes a conductive and transparent ITO (Indium Tin Oxide) thin film with an ultra-thin (to minimize the absorption) composite metallic layer to serve as a good ohmic contact and current spreading layer. The present invention avoids the Schottky contact due to direct deposition of ITO on the semiconductor. For AlGaInP materials, a thick GaP current spreading layer is omitted by the present invention. For GaN-based LEDs with the present invention, semi-transparent Ni/Au contact layer is avoided. Therefore, the light extraction of LED can be dramatically improved by the present invention. Holes may be etched into the semiconductor cladding layer forming a Photonic Band Gap structure to improve LED light extraction.
Abstract translation: 用于AlGaInP和GaN基材料的发光二极管（LED）需要良好的透明电流扩散层，以将电极或空穴从电极传播到有源层。 本发明利用具有超薄（使吸收最小化）复合金属层的导电和透明ITO（氧化铟锡）薄膜作为良好的欧姆接触电流扩展层。 本发明避免了由于在半导体上直接沉积ITO引起的肖特基接触。 对于AlGaInP材料，本发明省略了厚GaP电流扩散层。 对于本发明的GaN系LED，可以避免半透明的Ni / Au接触层。 因此，通过本发明可以显着提高LED的光提取。 可以将孔蚀刻到形成光子带隙结构的半导体包层中以改善LED光提取。
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