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公开(公告)号：NO792744L
公开(公告)日：1980-02-29
申请号：NO792744
申请日：1979-08-23
Applicant: IBM
Inventor： ALBERT PAUL ANDRE , HEIMAN NEIL DUANE , POTTER ROBERT IVAN , WHITE ROBERT LEE
IPC: C23C14/14 , C22C45/02 , C23C14/06 , G11B5/64 , G11B5/65 , H01F10/13 , H01F10/18 , H01F10/187 , H01F41/18 , G11B
Abstract: This invention relates to a thin film of an amorphous magnetic material including ion-nitride having the formula FexN1-x, where x is from 0.4 to 0.7. The film is deposited on a substrate by sputter deposition in the presence of an inert gas and at a pressure from 25 mu m to 100 mu m. The coercivity of the magnetic material varies as a function of the gas pressure employed during sputtering.
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2.发明专利
公开(公告)号：FI74165C
公开(公告)日：1987-12-10
申请号：FI792600
申请日：1979-08-21
Applicant: IBM
Inventor： ALBERT PAUL ANDRE , HEIMAN NEIL DUANE , POTTER ROBERT IVAN , WHITE ROBERT LEE
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公开(公告)号：DE2960790D1
公开(公告)日：1981-11-26
申请号：DE2960790
申请日：1979-12-10
Applicant: IBM
Inventor： ALBERT PAUL ANDRE , KENNEDY THOMAS NOLAN
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公开(公告)号：FI74165B
公开(公告)日：1987-08-31
申请号：FI792600
申请日：1979-08-21
Applicant: IBM
Inventor： ALBERT PAUL ANDRE , HEIMAN NEIL DUANE , POTTER ROBERT IVAN , WHITE ROBERT LEE
IPC: C23C14/14 , C22C45/02 , C23C14/06 , G11B5/64 , G11B5/65 , H01F10/13 , H01F10/18 , H01F10/187 , H01F41/18 , H01F10/10 , H01F41/14
Abstract: This invention relates to a thin film of an amorphous magnetic material including ion-nitride having the formula FexN1-x, where x is from 0.4 to 0.7. The film is deposited on a substrate by sputter deposition in the presence of an inert gas and at a pressure from 25 mu m to 100 mu m. The coercivity of the magnetic material varies as a function of the gas pressure employed during sputtering.
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Patent Agency Ranking
公开(公告)号：DE2964474D1
公开(公告)日：1983-02-17
申请号：DE2964474
申请日：1979-06-18
Applicant: IBM
Inventor： ALBERT PAUL ANDRE , HEIMAN NEIL DUANE , POTTER ROBERT IVAN , WHITE ROBERT LEE
IPC: C23C14/14 , C22C45/02 , C23C14/06 , G11B5/64 , G11B5/65 , H01F10/13 , H01F10/18 , H01F10/187 , H01F41/18 , G11B5/62 , C23C15/00 , H01F10/10
Abstract: This invention relates to a thin film of an amorphous magnetic material including ion-nitride having the formula FexN1-x, where x is from 0.4 to 0.7. The film is deposited on a substrate by sputter deposition in the presence of an inert gas and at a pressure from 25 mu m to 100 mu m. The coercivity of the magnetic material varies as a function of the gas pressure employed during sputtering.
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公开(公告)号：FI792600A
公开(公告)日：1980-02-29
申请号：FI792600
申请日：1979-08-21
Applicant: IBM
Inventor： ALBERT PAUL ANDRE , HEIMAN NEIL DUANE , POTTER ROBERT IVAN , WHITE ROBERT LEE
IPC: C23C14/14 , C22C45/02 , C23C14/06 , G11B5/64 , G11B5/65 , H01F10/13 , H01F10/18 , H01F10/187 , H01F41/18 , H01F
Abstract: This invention relates to a thin film of an amorphous magnetic material including ion-nitride having the formula FexN1-x, where x is from 0.4 to 0.7. The film is deposited on a substrate by sputter deposition in the presence of an inert gas and at a pressure from 25 mu m to 100 mu m. The coercivity of the magnetic material varies as a function of the gas pressure employed during sputtering.
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公开(公告)号：AU521856B2
公开(公告)日：1982-05-06
申请号：AU4796879
申请日：1979-06-11
Applicant: IBM
Inventor： ALBERT PAUL ANDRE , HEIMAN NEIL DUANE , POTTER ROBERT IVAN , WHITE ROBERT LEE
IPC: C23C14/14 , C22C45/02 , C23C14/06 , G11B5/64 , G11B5/65 , H01F10/13 , H01F10/18 , H01F10/187 , H01F41/18 , G11B5/62 , H01F1/14 , H01F10/02 , H01F41/14
Abstract: This invention relates to a thin film of an amorphous magnetic material including ion-nitride having the formula FexN1-x, where x is from 0.4 to 0.7. The film is deposited on a substrate by sputter deposition in the presence of an inert gas and at a pressure from 25 mu m to 100 mu m. The coercivity of the magnetic material varies as a function of the gas pressure employed during sputtering.
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公开(公告)号：AU4796879A
公开(公告)日：1980-03-06
申请号：AU4796879
申请日：1979-06-11
Applicant: IBM
Inventor： ALBERT PAUL ANDRE , HEIMAN NEIL DUANE , POTTER ROBERT IVAN , WHITE ROBERT LEE
IPC: C23C14/14 , C22C45/02 , C23C14/06 , G11B5/64 , G11B5/65 , H01F10/13 , H01F10/18 , H01F10/187 , H01F41/18 , H01F1/14 , H01F10/02 , H01F41/14 , G11B5/62
Abstract: This invention relates to a thin film of an amorphous magnetic material including ion-nitride having the formula FexN1-x, where x is from 0.4 to 0.7. The film is deposited on a substrate by sputter deposition in the presence of an inert gas and at a pressure from 25 mu m to 100 mu m. The coercivity of the magnetic material varies as a function of the gas pressure employed during sputtering.
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公开(公告)号：NO792744A
公开(公告)日：1980-02-29
申请号：NO792744
申请日：1979-08-23
Applicant: IBM
Inventor： ALBERT PAUL ANDRE , HEIMAN NEIL DUANE , POTTER ROBERT IVAN , WHITE ROBERT LEE
IPC: C23C14/14 , C22C45/02 , C23C14/06 , G11B5/64 , G11B5/65 , H01F10/13 , H01F10/18 , H01F10/187 , H01F41/18 , G11B
CPC classification number: C23C14/0641 , H01F10/131 , H01F10/187 , H01F41/18 , Y10S428/90 , Y10T428/26 , Y10T428/265
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