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公开(公告)号：US3795977A
公开(公告)日：1974-03-12
申请号：US3795977D
申请日：1971-12-30
Applicant: IBM
CPC classification number: G11C13/0007 , G11C11/39 , G11C13/0069 , G11C2013/0083 , G11C2213/31 , H01C7/108 , H01L27/2472 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1633 , Y10T29/413
Abstract: Methods for providing bistable resistors fabricated from insulators exhibiting a plurality of impedance states, an example of which is a niobium-niobium oxide device. These methods use thermal treatment and chemical reduction of amorphous metal oxides to form an active filament in each device. In one method consumable metal dots are located on the amorphous metal oxide and the oxide is then annealed in an inert gas, preferably having a small percentage of oxygen therein. This causes an oxidationreduction reaction in the oxide regions directly beneath the metal dots. In a second method, the metal oxide layer is covered with a protective insulating mask except in selected portions, and the exposed metal oxide portions are then annealed in a reducing gas atmosphere. In each method, the top electrodes are deposited on the selectively reduced portions of the metal oxide layer and then the devices are electrically formed using only a small voltage (2 or 3 volts).
Abstract translation: 提供由表现出多个阻抗状态的绝缘体制造的双稳态电阻器的方法，其实例是铌 - 氧化铌器件。 这些方法使用无定形金属氧化物的热处理和化学还原来在每个装置中形成活性丝。 在一种方法中，可消耗金属点位于无定形金属氧化物上，然后氧化物在惰性气体中退火，优选在其中具有小百分比的氧。 这导致在金属点正下方的氧化物区域发生氧化还原反应。 在第二种方法中，除了选定的部分之外，金属氧化物层被保护绝缘掩模覆盖，然后暴露的金属氧化物部分在还原气体气氛中退火。 在每种方法中，顶部电极沉积在金属氧化物层的选择性还原部分上，然后仅使用小的电压（2或3伏特）电气地形成器件。
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公开(公告)号：SE398872B
公开(公告)日：1978-01-23
申请号：SE7404779
申请日：1974-04-09
Applicant: IBM
Inventor： BERKENBLIT M , LUSSOW R O , REISMAN A
Abstract: A process for the in situ fabrication of a glass from an admixed frit, for example, of two starting glasses on the required existing substrate structure therefore. The admixed frit comprises a low glass transition temperature glass and a higher glass transition temperature glass, which glasses are uniquely capable of forming a continuous vitreous phase over their entire compositional range. During thermal cycling, the low glass transition temperature glass flows out and solubilizes the higher glass transition temperature glass to thereby synthesize in situ a new glass. The temperature required to form the glass by the in situ process is less than that required where a glass of identical composition is first preequilibrated externally and then applied in frit form to the existing substrate structure and flowed out thereon. The in situ synthesized new glass softens and flows at a temperature higher than that of the low glass transistion temperature glass and lower than that of the higher glass transition temperature glass, and exhibits a glass transition temperature intermediate to the two starting glasses.
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公开(公告)号：SE310354B
公开(公告)日：1969-04-28
申请号：SE1404662
申请日：1962-12-28
Applicant: IBM
Inventor： REISMAN A , BERKENBLIT M
IPC: B01J10/00 , C01B19/00 , C01B25/06 , C01G1/12 , C22C1/00 , C22C1/02 , C22C1/04 , H01L21/00 , B01J1/00
Abstract: A binary compound XY is formed by mixing two exothermic reacting elements X and Y together and heating to above the melting point of the element X having the higher melting point; X being of particle size, e.g. less than 44 m , such that it is all consumed. One of the elements may be from Group IIb (Zn, Cd, Hg) or IIIB (Ga, In, T1) and the other from VB (P, As, Sb) or VIb (S, Se, Te). Particles of Y may be 1/8 -inch, or the same size as X. A metallic element, e.g. Cd, may be used with an oxide coating, or this may be removed by treating with concentrated aqueous ammonia, washing, and drying in air or vacuum at 100 DEG C., or by reducing in H2 at 200 DEG C. The mixture of X and Y is placed in an ampoule which is evacuated or filled with an inert gas and sealed, then heated at 0.1 to 5 DEG C. per min. to 5-100 DEG C. above the melting point of X and cooled slowly or by air quenching. The product may be ground and the heating cycle repeated.
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