公开(公告)号：US3737739A

公开(公告)日：1973-06-05

申请号：US3737739D

申请日：1971-02-22

Applicant: IBM

Inventor： BLAKESLEE A ,  GUKELBERGER T ,  LYONS V

IPC: H01L21/00 ,  H01L21/20 ,  H01L21/84 ,  H01L29/04 ,  H01L5/00

CPC classification number: H01L29/04 ,  H01L21/00 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02653 ,  H01L21/84 ,  Y10S148/085 ,  Y10S148/15 ,  Y10S148/152 ,  Y10S148/17

Abstract: A structure having single crystal islands in a dielectric substrate is described. The substrate has recesses formed in its surface to receive the single crystal bodies therein. By applying a temperature gradient across each of the bodies throughout the entire heating cycle, nucleation occurs only at a bottom point on each of the bodies when a vapor containing the material to be nucleated is passed over the bodies with the material of the bodies being molten. The single crystalline material can be, for example, silicon or germanium and the dielectric material can be, for example, a silicon dioxide glass or a mixed oxide ceramic.

Abstract translation: 描述了在电介质基片中具有单晶岛的结构。 基板在其表面上形成凹部，以容纳其中的单晶体。 通过在整个加热循环中跨每个物体施加温度梯度，当含有待成核材料的蒸汽在物体的材料被熔化时，成核仅发生在每个物体上的底点处 。 单晶材料可以是例如硅或锗，并且介电材料可以是例如二氧化硅玻璃或混合氧化物陶瓷。

公开(公告)号：US3721583A

公开(公告)日：1973-03-20

申请号：US3721583D

申请日：1970-12-08

Applicant: IBM

Inventor： BLAKESLEE A

IPC: H01L21/205 ,  B44D1/18

CPC classification number: H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  Y10S117/902 ,  Y10S148/005 ,  Y10S148/056 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/129 ,  Y10S438/936

Abstract: A VAPOR PHASE EPITAXIAL PROCESS FOR FORMING A SUPERLATTICE STRUCTURE COMPRISING ALTERNATE LAYERS OF DIFFERENT SEMICONDUCTOR MATERIALS ON A SUBSTRATE. IN THE SUPERLATTICE, THE PROPORTION OF ONE COMPONENT IS CAUSED TO PERIODICALLY VARY FROM A DESIRED MAXIMUM TO A DESIRED MINIMUM OVER AN EXTREMELY SMALL PERIOD. FOR AN N COMPONENT SYSTEM, THIS IS ACCOMPLISHED BY FORMING A STREAM COMPRISING N-1 COOPONENTS AND INJECTING PULSES OF THE NTH COMPONENT IN A CARRIER GAS SEPARATED BY PULSES OF CARRIER GAS INTO THE N-1 COMPONENT STREAM, TO THEREBY PROVIDE AT THE SUBSTRATE ALTERNATE, DISCRETE BURSTS OF GAS COMPRISING N COMPONENTS AND N-1 COMPONENTS, RESPECTIVELY. BY CRITICALLY CONTROLLING DIFFUSION OF ADJACENT PULSES AND BURSTS, THE PROPORTION OF THE NTH COMPONENT IN THE SUPERLATTICE STRUCTURE CAN BE VARIED FROM A MAXIMUM TO A MINUMUM WITHIN AN EXTREMELY SMALL PERIOD. HIGH TEMPERATURE, VAPOR PHASE EPITAXIAL DEPOSITION APPARATUS FOR DEPOSITING SUCH A REPETITIVE SUPERLATTICE STRUCTURE: BASICALLY A PULSING CHAMBER TO RECEIVE THE N-1 COMPONENT STREAM; PULSING MEANS TO PERIODICALLY PULSE THE NTH COMPONENT INTO THE N-1 COMPONENT STREAM, WHEREBY THE BURSTS DESCRIBED ABOVE ARE FORMED; AND DEPOSITION MEANS CONTAINING A SUBSTRATE TO RECEIVE SAID BURSTS FOR THE FORMATION OF SAD SUPERLATTICE. ALL ELEMENTS ARE CORRELATED TO PERMIT DIFFUSION TO BE CRITICALLY CONTROLLED.

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