公开(公告)号：CA1097826A

公开(公告)日：1981-03-17

申请号：CA305231

申请日：1978-06-12

Applicant: IBM

Inventor： BONDUR JAMES A ,  POGGE H BERNHARD

IPC: H01L21/76 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/762 ,  H01L27/00

Abstract: METHOD FOR FORMING ISOLATED REGIONS OF SILICON A method for isolating regions of silicon involving the formation of openings that have a suitable taper in a block of silicon, thermally oxidizing the surfaces of the openings, and filling the openings with a dielectric material to isolate regions of silicon within the silicon block. The method is particularly useful wherein the openings are made through a region of silicon having a layer of a high doping conductivity.

公开(公告)号：CA1108772A

公开(公告)日：1981-09-08

申请号：CA355850

申请日：1980-07-09

Applicant: IBM

Inventor： BONDUR JAMES A ,  POGGE H BERNHARD

IPC: H01L21/31

Abstract: METHOD FOR FORMING ISOLATED REGIONS OF SILICON A method for isolating regions of silicon involving the formation of openings that have a suitable taper in a block of silicon, thermally oxidizing the surfaces of the openings, and filling the openings with a dielectric material to isolate regions of silicon within the silicon block. The method is particularly useful wherein the openings are made through a region of silicon having a layer of a high doping conductivity.