公开(公告)号：CA2112447A1

公开(公告)日：1994-08-24

申请号：CA2112447

申请日：1993-12-24

Applicant: IBM

Inventor： ABOELFOTOH MOHAMED O ,  BRADY M JOHN ,  KRUSIN-ELBAUM LIS

IPC: C22C1/00 ,  C22C9/00 ,  C23C14/06 ,  C30B25/02 ,  H01L21/285 ,  C30B29/40 ,  H01L23/532

Abstract: A NEW COMPOUND WITH ROOM-TEMPERATURE ELECTRICAL RESISTIVITY COMPARABLE TO THAT OF ELEMENTAL COPPER The present invention relates to novel compounds that exhibit unusually low electrical resistivity at room temperature. More specifically, it has been discovered that the incorporation of at least 1 to 15 atomic percent of gallium and/or at least 1 to 15 atomic percent gold into stoichiometric copper germanide (Cu3Ge) compound results in a room temperature resistivity comparable to elemental copper, but with superior chemical and electronic stability upon exposure to air or oxygen at high temperatures. Furthermore, the compounds of the present invention have none of the problems associated with the diffusion of copper into elemental and compound semiconductors which oftentimes lead to the degradation of the semiconductor device characteristics. Additionally, the present invention relates to a method of preparing the novel compounds mentioned previously hereinabove.