公开(公告)号：AT514189T

公开(公告)日：2011-07-15

申请号：AT08167167

申请日：2008-10-21

Applicant: IBM

Inventor： CANNON ETHAN ,  CHEN FEN

IPC: H01L29/06 ,  H01L21/265 ,  H01L21/336

Abstract: Device structures with a self-aligned damage layer and methods of forming such device structures. The device structure first and second doped regions of a first conductivity type defined in the semiconductor material of a substrate. A third doped region of opposite conductivity type laterally separates the first doped region from the second doped region. A gate structure is disposed on a top surface of the substrate and has a vertically stacked relationship with the third doped region. A first crystalline damage layer is defined within the semiconductor material of the substrate. The first crystalline damage layer has a first plurality of voids surrounded by the semiconductor material of the substrate. The first doped region is disposed vertically between the first crystalline damage layer and the top surface of the substrate. The first crystalline damage layer does not extend laterally into the third doped region.