Abstract:
PROBLEM TO BE SOLVED: To provide a 3D (3-dimensional) integrating method of manufacturing 3D integrated circuit, in which a pFET is arranged on a crystal surface optimal for this device, and an nFET can be arranged on a crystal surface optimal for this type of device. SOLUTION: In a first 3D integrating method, a first semiconductor device is constituted on a semiconductor surface of a first SOI (silicon-on-insulator) substrate, in advance, and a second semiconductor device is constituted on a semiconductor surface of a second SOI substrate in advance. After these two structures have been constituted in advance, these structures are combined mutually, and they are interconnected via a wafer, namely, via a penetration via hole. In a second 3D integrating method, the first semiconductor device is formed, in such a way that a blanket SOI substrate having a first SOI layer of a first crystal orientation is combined at a surface of the wafer, which has been manufactured, in advance and has the second semiconductor device, on a second SOI layer having a crystal orientation different from that of the first SOI layer and the first semiconductor device on the first SOI layer. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
A method, system and apparatus for a commerce system having a service oriented architecture (SOA). The SOA commerce system of the present invention can include a component logic container exposing an interface to one or more accessing clients and having a configuration for hosting one or more business components. The SOA commerce system also can include a business context engine disposed with the container and exposing an interface to the accessing clients. Finally, the SOA commerce system can include a business component facade disposed within the container and having a configuration for both invoking selected ones of the business components and for communicating with the business context engine.
Abstract:
PROBLEM TO BE SOLVED: To provide a material that can exhibit a desirable stress in using a field effect transistor, e.g., sufficiently high stress for an etching stop liner (e.g., a stress that exceeds +10G dyne/cm 2 , stress of approximately +14.5G dyne/cm 2 in a preferred embodiment), and further continues to exhibit the desirable high stress after repeated annealing. SOLUTION: Stress level of a nitride film is adjusted as two or more functions of the following: (1) selection of a starting material precursor to be used to make the nitride film, by use of which the starting material precursor is processed, (2) selection of a precursor including nitrogen, (3) the ratio of the starting material precursor and the precursor including nitrogen, (4) a set of CVD conditions for growing the film and (5) a thickness that grows the film. A rapid thermal chemical vapor deposition (RTCVD) film produced by reacting a compound including silicon, nitrogen and carbon (e.g., bis-t-butylaminosilane (BTBAS)) with NH 3 can provide an advantageous characteristic such as performance excellent in high use or an etching stop application. An ammonia treated BTBAS film is especially excellent in providing a high-stress characteristic and is capable of maintaining the high-stress characteristic even if annealing is repeated. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a -containing layer having a 110 crystal orientation and a biaxial compressive strain. The term ''biaxial compressive stress'' is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing 110 layer; and creating a biaxial strain in the silicon-containing 110 layer.
Abstract:
The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a -containing layer having a 110 crystal orientation and a biaxial compressive strain. The term ''biaxial compressive stress'' is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing 110 layer; and creating a biaxial strain in the silicon-containing 110 layer.
Abstract:
The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a -containing layer having a 110 crystal orientation and a biaxial compressive strain. The term ''biaxial compressive stress'' is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing 110 layer; and creating a biaxial strain in the silicon-containing 110 layer.
Abstract:
An e-commerce system having a catalog database including package data correlated to at least one package; a selection module; and a resolution module. The catalog database preferably also includes item data correlated to a plurality of items, each of which is fully resolved; product data correlated to at least one product, wherein each product comprises at least one unresolved attribute; and attribute data. An e-commerce method comprising the steps of creating a catalog database containing package data correlated to at least one package, each package having at least one unresolved package attribute; determining a selected package from the catalog database; and resolving the unresolved attributes.
Abstract:
Pages are provided in response to a request from a browser received by a server. The server obtains an adapted page, based on a template page, from a display infrastructure. Th e display infrastructure uses a template page identifier obtained from a resolution component. The resolution component obtains template page identifiers by matching attributes relating to the pag e request with attributes associated with template page identifiers stored in a database. The template page identifiers are provided based on the best match of the template page attributes and the pag e request attributes, with default values being used and a defined ranking being used where multiple matched template pages exist.
Abstract:
A structure and method of fabrication of a semiconductor device having a stress relief layer under a stress layer in one region of a substrate. In a first example, a stress relief layer is formed over a first region of the substrate (e.g., PFET region) and not over a second region (e.g., NFET region). A stress layer is over the stress relief layer in the first region and over the devices and substrate/silicide in the second region. The NFET transistor performance is enhanced due to the overall tensile stress in the NFET channel while the degradation in the PFET transistor performance is reduced/eliminated due to the inclusion of the stress relief layer. In a second example embodiment, the stress relief layer is formed over the second region, but not the first region and the stress of the stress layer is reversed.
Abstract:
A method, system and apparatus for a commerce system having a service oriented architecture (SOA). The SOA commerce system of the present invention can include a component logic container exposing an interface to one or more accessing clients and having a configuration for hosting one or more business components. The SOA commerce system also can include a business context engine disposed with the container and exposing an interface to the accessing clients. Finally, the SOA commerce system can include a business component facade disposed within the container and having a configuration for both invoking selected ones of the business components and for communicating with the business context engine.