公开(公告)号：DE2803795A1

公开(公告)日：1978-12-14

申请号：DE2803795

申请日：1978-01-28

Applicant: IBM

Inventor： CHANG LEROY LIGONG ,  ESAKI LEO ,  SAI-HALASZ GEORGE ANTHONY

IPC: G11C19/28 ,  G11C11/34 ,  G11C11/35 ,  G11C13/06 ,  H01L21/203 ,  H01L21/8247 ,  H01L29/15 ,  H01L29/788 ,  H01L29/792 ,  H01L29/861 ,  G11C11/24 ,  G11C7/00 ,  H01L29/66

公开(公告)号：DE2806766A1

公开(公告)日：1978-12-07

申请号：DE2806766

申请日：1978-02-17

Applicant: IBM

Inventor： CHANG CHIN-AN ,  CHANG LEROY LIGONG ,  ESAKI LEO

IPC: H01L33/00 ,  C30B23/02 ,  C30B23/08 ,  H01L21/02 ,  H01L21/203 ,  H01L21/268 ,  H01L47/00 ,  B05D5/12

公开(公告)号：DE2804568A1

公开(公告)日：1978-12-21

申请号：DE2804568

申请日：1978-02-03

Applicant: IBM

Inventor： CHANG LEROY LIGONG ,  ESAKI LEO

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/76 ,  H01L29/88 ,  H01L29/72

Abstract: Device having three semiconductor regions, which can be characterized as the emitter, base and collector regions. The emitter and collector regions have a first conductivity type, and the base region has the opposite conductivity type, where both the base-emitter and base-collector junctions are heterojunctions. The base region is sufficiently thin that charge carriers can tunnel therethrough. The base region has a small resistance due to its heavy doping (which is greater than the doping of both the emitter and the collector). Both the valence band and the conduction band in the emitter and collector regions are shifted in the same direction with respect to the valence band and conduction band of the base region (i.e., the energy gaps of the emitter and collector are shifted in the same direction with respect to the energy gap of the base region and overlap with the energy band of the base to produce band-edge discontinuities DELTA Ec and DELTA Ev). Any materials yielding the proper energy band diagram can be used; for example, Si-GaP and alloys of GaAsSb-InGaAs are particularly suitable.

公开(公告)号：DE2801292A1

公开(公告)日：1978-10-26

申请号：DE2801292

申请日：1978-01-13

Applicant: IBM

Inventor： CHANG LEROY LIGONG ,  ESAKI LEO

IPC: H01L33/00 ,  H01L21/331 ,  H01L29/15 ,  H01L29/73 ,  H01L47/02 ,  H01L29/72 ,  H01L31/16

Abstract: A semiconductor structure may be fabricated that confines current flow to two dimensions by constructing as a structure a body of alternate regions of different semiconductor materials with current flow parallel to the intersections of the regions. The structure, in device form, exhibits the properties of selectable energy gap, higher carrier mobility and increased electronic density of states. Such devices are usable for their bulk properties, their junction electro-optical properties and their junction transistor properties.