公开(公告)号：DE1966236A1

公开(公告)日：1971-12-16

申请号：DE1966236

申请日：1969-07-29

Applicant: IBM

Inventor： CHARLES DUFFY MICHAEL ,  AUGUST SCHUMANN JUN PAUL ,  YEH TSU-HSING

IPC: H01L21/76 ,  H01L21/00 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/337 ,  H01L21/74 ,  H01L21/761 ,  H01L21/82 ,  H01L21/822 ,  H01L21/8222 ,  H01L27/00 ,  H01L27/04 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/808 ,  H01L7/54

Abstract: Monolithic integrated circuits are made utilizing various ion implantation techniques for making diodes, transistors, resistors, capacitors, underpass connections, sub-collector junctions, etc., and for altering impurity profiles, gold doping, trimming resistance values, altering junctions depth, and isolating regions.

公开(公告)号：DE1966237A1

公开(公告)日：1972-01-13

申请号：DE1966237

申请日：1969-07-29

Applicant: IBM

Inventor： CHARLES DUFFY MICHAEL ,  AUGUST SCHUMANN JUN PAUL ,  YEH TSU-HSING

IPC: H01L21/76 ,  H01L21/00 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/337 ,  H01L21/74 ,  H01L21/761 ,  H01L21/82 ,  H01L21/822 ,  H01L21/8222 ,  H01L27/00 ,  H01L27/04 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/808 ,  H01L7/54

Abstract: Monolithic integrated circuits are made utilizing various ion implantation techniques for making diodes, transistors, resistors, capacitors, underpass connections, sub-collector junctions, etc., and for altering impurity profiles, gold doping, trimming resistance values, altering junctions depth, and isolating regions.

公开(公告)号：DE1938365A1

公开(公告)日：1970-02-12

申请号：DE1938365

申请日：1969-07-29

Applicant: IBM

Inventor： CHARLES DUFFY MICHAEL ,  YEH TSU-HSING ,  AUGUST SCHUMANN JUN PAUL

IPC: H01L21/76 ,  H01L21/00 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/337 ,  H01L21/74 ,  H01L21/761 ,  H01L21/82 ,  H01L21/822 ,  H01L21/8222 ,  H01L27/00 ,  H01L27/04 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/808 ,  H01L7/54

Abstract: Monolithic integrated circuits are made utilizing various ion implantation techniques for making diodes, transistors, resistors, capacitors, underpass connections, sub-collector junctions, etc., and for altering impurity profiles, gold doping, trimming resistance values, altering junctions depth, and isolating regions.