公开(公告)号：GB2548762A

公开(公告)日：2017-09-27

申请号：GB201710319

申请日：2016-01-05

Applicant: IBM

Inventor： SANGBUM KIM ,  CHONG HON LAM

IPC: G06N3/063 ,  G06G7/60 ,  G06N3/04 ,  G06N3/08 ,  G11C11/54 ,  G11C27/00

Abstract: A neuromorphic memory circuit (102) includes a programmable resistive memory element (108), an axon LIF line (116) to transmit an axon LIF pulse, and a dendrite LIF line (110) to build up a dendrite LIF charge over time. A first transistor (104) provides a discharge path for the dendrite LIF charge through the programmable resistive memory element (108) when the axon LIF line (116) transmits the axon LIF pulse. An axon STDP line (122) transmits an axon STDP pulse. The axon STDP pulse is longer than the axon LIF pulse. A dendrite STDP line (118) is configured to transmit a dendrite STDP pulse after voltage (V post) at the dendrite LIF line (110) falls below a threshold voltage (120). A second transistor (106) is coupled to the axon STDP line (122) and the programmable resistive memory element (108). The second transistor (106) provides an electrical path for the dendrite STDP pulse through the programmable resistive memory element (108) when the axon STDP line (122) transmits the axon STDP pulse.

公开(公告)号：GB2548762B

公开(公告)日：2018-05-09

申请号：GB201710319

申请日：2016-01-05

Applicant: IBM

Inventor： SANGBUM KIM ,  CHONG HON LAM

IPC: G06N3/063 ,  G06G7/60 ,  G06N3/04 ,  G06N3/08 ,  G11C11/54 ,  G11C27/00

Abstract: A method for operating a neuromorphic memory circuit. The method includes accumulating a dendrite LIF charge over time on a conductive dendrite LIF line. A first transmitting operation transmits an axon LIF pulse on a conductive axon LIF line. A first switching operation switches on a LIF transistor by the axon LIF pulse such that the LIF transistor provides a discharge path for the dendrite LIF charge through a programmable resistive memory element when the axon LIF line transmits the axon LIF pulse. A second transmitting operation transmits a dendrite STDP pulse if the dendrite LIF charge falls below a threshold voltage. A third transmitting operation transmits an axon STDP pulse on a conductive axon STDP line. A second switching operation switches on a STDP transistor by the axon STDP pulse. The STDP transistor provides an electrical path for the dendrite STDP pulse through the programmable resistive memory element when the axon STDP line transmits the axon STDP pulse.