公开(公告)号：FR2337402A1

公开(公告)日：1977-07-29

申请号：FR7635304

申请日：1976-11-19

Applicant: IBM

Inventor： CHRISTIE KENNETH H ,  DEWITT DAVID ,  JOHNSON WILLIAM S

IPC: H01L21/8247 ,  G11C16/04 ,  H01L21/336 ,  H01L27/088 ,  H01L29/10 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  G11C11/34 ,  H01L21/74 ,  H01L27/04

Abstract: A metal nitride oxide semiconductor device capable of use within a memory cell, having a more heavily doped region of the same type as the substrate provided directly under the channel of the depletion mode device. Application of a positive write voltage to the gate of the device, with the substrate at 0 volts potential and the source and drain biased to a suitable positive level, results in avalanche operation of the device whereby charge is stored in a nitride oxide interface under the gate, thereby converting the device to enhancement mode operation. The charge can be removed with the source and drain biased to the 0 volt potential of the substrate and a positive erase signal applied to the gate. A four device memory cell is disclosed.