公开(公告)号：SG91847A1

公开(公告)日：2002-10-15

申请号：SG1999005986

申请日：1999-11-29

Applicant: IBM

Inventor： PANAYOTIS CONSTANTINOU ANDRICA ,  ROGER YEN-LUEN TSAI ,  KENNETH P RODBELL ,  CYRIL CABRAL JR ,  CHRISTOPHER CARR PARKS

IPC: H01L21/265 ,  H01L21/283 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532 ,  H01L29/43

Abstract: A method for forming a copper conductor in an electronic structure by first depositing a copper composition in a receptacle formed in the electronic structure, and then adding impurities into the copper composition such that its electromigration resistance is improved. In the method, the copper composition can be deposited by a variety of techniques such as electroplating, physical vapor deposition and chemical vapor deposition. The impurities which can be implanted include those of C, O, Cl, S and N at a suitable concentration range between about 0.01 ppm by weight and about 1000 ppm by weight. The impurities can be added by different methods such as ion implantation, annealing and diffusion.