METHOD FOR USE IN BRAZING AN INTERCONNECT PIN TO A METALLIZATION PATTERN SITUATED ON A BRITTLE DIELECTRIC

    公开(公告)号:CA1236930A

    公开(公告)日:1988-05-17

    申请号:CA504664

    申请日:1986-03-20

    Applicant: IBM

    Abstract: A METHOD FOR USE IN BRAZING AN INTERCONNECT PIN TO A METALLIZATION PATTERN SITUATED ON A BRITTLE DIELECTRIC SUBSTRATE A method for use in brazing an interconnect pin to a portion of metallization pattern (e.g. a pad) existing on a brittle dielectric substrate, such as a multi-layered ceramic (MLC) substrate, is disclosed. A dielectric layer is formed with appropriate annular openings. Each opening provides a closed containment wall, which extends around and above the pad, to hold the brazing alloy. Each circular containment wall is concentrically aligned with its associated pad and exposes an area, of each pad, having a smaller diameter than that of the entire pad. The containment walls serve to prevent the brazing alloy from coming into contact with any edge of the pads.

Patent Agency Ranking