公开(公告)号：US3639185A

公开(公告)日：1972-02-01

申请号：US3639185D

申请日：1969-06-30

Applicant: IBM

Inventor： COLOM LUCAS A ,  LEVINE HAROLD A

IPC: C09K13/12 ,  C23F1/00 ,  C23F1/10 ,  C23F1/38 ,  G03C1/72 ,  H01L21/308 ,  C23G1/20 ,  C23F1/02

CPC classification number: C23F1/38

Abstract: A composition for etching thin films of metal, such as chromium or molybdenum, comprising alkaline metal salts of weak inorganic acids which yield solutions having a pH in the range of 12 to 13.5, e.g. sodium or potassium-meta or orthosilicates or sodium orthophosphate, and oxidizing agents active in alkaline solutions, such as potassium permanganate or sodium ferricyanide. Also, the method of selectively etching away portions of such metal films by masking said films with positive alkali-developed photoresists and treating with the etching compositions described above.

Abstract translation: 用于蚀刻诸如铬或钼的金属薄膜的组合物，其包含弱酸性无机酸的碱金属盐，其产生pH在12至13.5范围内的溶液，例如。 钠或钾或原硅酸盐或正磷酸钠，以及在碱性溶液中活化的氧化剂，例如高锰酸钾或铁氰化钠。 此外，通过用正碱显影的光致抗蚀剂掩蔽所述膜并用上述蚀刻组合物进行处理，选择性地蚀刻掉这些金属膜的部分的方法。

公开(公告)号：US3666473A

公开(公告)日：1972-05-30

申请号：US3666473D

申请日：1970-10-06

Applicant: IBM

Inventor： COLOM LUCAS A ,  LEVINE HAROLD A

IPC: G03F7/023 ,  G03C1/52 ,  G03C1/60

CPC classification number: G03F7/0236

Abstract: A FAST POSITIVE PHOTORESIST COMPOSITION EMPLOYS A MIXTURE OF PHENOL-FORMALDEHYDE NOVOLAK AND RESOLE RESINS, EACH HAVING A PARTICULAR MOLECULAR WEIGHT DISTRIBUTION AS DETERMINED BY THEIR SOLUBILITIES IN AQUEOUS ALKALINE SOLUTION, TOGETHER WITH A CONVENTIONAL DIAZOKETONE TYPE OF PHOTOSENSITIZER.

公开(公告)号：CA912963A

公开(公告)日：1972-10-24

申请号：CA912963D

Applicant: IBM

Inventor： COLOM LUCAS A ,  LEVINE HAROLD A

IPC: C23F1/02 ,  C23F1/38 ,  C23G1/20