公开(公告)号：DE19963674A1

公开(公告)日：2000-07-20

申请号：DE19963674

申请日：1999-12-29

Applicant: IBM

Inventor： BUCHMANN DOUGLAS ,  COPEL MATTHEW ,  VAREKAMP PATRICK RONALD

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/283 ,  H01L21/318 ,  H01L21/336 ,  H01L29/51

Abstract: Oxynitride gate dielectric formation comprises oxynitride layer formation on a silicon substrate by reaction or CVD and back-oxidation to form an intermediate silicon dioxide layer. Oxynitride gate dielectric formation in a semiconductor device comprises: (a) contacting the upper surface of a silicon substrate with a nitrogen- and/or oxygen-containing gas at >= 500 deg C to form an oxynitride layer; and (b) contacting the substrate and the layer with an oxygen- and halogen compound-containing gas to form a silicon dioxide layer between the oxynitride layer and the substrate. Independent claims are also included for the following: (i) a similar process in which the oxynitride layer is formed by CVD; (ii) a gate dielectric in a semiconductor device, comprising a SiO2 spacer layer between a silicon substrate and an oxynitride layer; and (iii) a gate stack in a semiconductor device, comprising a silicon substrate bearing a sequence of a SiO2 spacer layer, an oxynitride layer, a SiO2 layer and a conductive gate.

公开(公告)号：DE19963674B4

公开(公告)日：2006-06-29

申请号：DE19963674

申请日：1999-12-29

Applicant: IBM

Inventor： BUCHMANN DOUGLAS ,  COPEL MATTHEW ,  VAREKAMP PATRICK RONALD

IPC: H01L21/336 ,  H01L29/78 ,  H01L21/28 ,  H01L21/283 ,  H01L21/318 ,  H01L29/51

Abstract: A method for forming an oxynitride gate dielectric in a semiconductor device and gate dielectric structure formed by the method are disclosed. In the method, an oxynitride layer is first formed on a silicon surface and then re-oxidized with a gas mixture containing oxygen and at least one halogenated species such that an oxynitride layer with a controlled nitrogen profile and a layer of substantially silicon dioxide formed underneath the oxynitride film is obtained. The oxynitride film layer can be formed by either contacting a surface of silicon with at least one gas that contains nitrogen and/or oxygen at a temperature of not less than 500° C. or by a chemical vapor deposition technique. The re-oxidation process may be carried out by a thermal process in an oxidizing halogenated atmosphere containing oxygen and a halogenated species such as HCl, CH2Cl2, C2H3Cl3, C2H2Cl2, CH3Cl and CHCl3.