公开(公告)号：GB2497641A

公开(公告)日：2013-06-19

申请号：GB201221473

申请日：2012-11-29

Applicant: IBM

Inventor： DEMUYNCK DAVID ALAN ,  CZABAJ BRIAN MATTHEW ,  STAMPER ANTHONY K

IPC: B81C1/00 ,  H01H1/00

Abstract: The composite beam 34 comprises multiple layers of metal and metal oxide. A single anisotropic reactive ion etch step is used to ensure that the edges of the beam layers are self aligned. Sacrificial oxide material 44 from around the beam is removed via the vent 48 using HF or xenon difluoride etchant. The MEMS beam may be used in a MEMS switch for mode switching of power amplifiers or analogue and mixed signal applications.

公开(公告)号：GB2497641B

公开(公告)日：2014-03-26

申请号：GB201221473

申请日：2012-11-29

Applicant: IBM

Inventor： DEMUYNCK DAVID ALAN ,  CZABAJ BRIAN MATTHEW ,  STAMPER ANTHONY K

IPC: B81C1/00 ,  H01H1/00

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes layering metal and insulator materials on a sacrificial material formed on a substrate. The method further includes masking the layered metal and insulator materials. The method further includes forming an opening in the masking which overlaps with the sacrificial material. The method further includes etching the layered metal and insulator materials in a single etching process to form the beam structure, such that edges of the layered metal and insulator material are aligned. The method further includes forming a cavity about the beam structure through a venting.