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公开(公告)号:JPH02279718A
公开(公告)日:1990-11-15
申请号:JP4739390
申请日:1990-03-01
Applicant: IBM
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公开(公告)号:JPH02302053A
公开(公告)日:1990-12-14
申请号:JP8929090
申请日:1990-04-05
Applicant: IBM
Abstract: PURPOSE: To make the separate formation of a passivation layer unnecessary by using a polyimide material masking a substrate at etching time as a final passivation layer. CONSTITUTION: When photo-imageable epoxy resin layers 22 are applied to both surfaces of a substrate 10 having metallization and the layers 22 are exposed to chemical rays, the exposed parts polymerize and become masks and the unexposed parts are removed after development. The entire surfaces of the remaining parts of the layers 22 on both surfaces are exposed to light, and the resin of the layers 22 are cured for 30 minutes at 150 deg.C. Then the polyimide is etched with a concentrated potassium hydroxide at about 85 deg.C. When the epoxy resin is rinsed and treated with sulfuric acid maintained at about 80 deg.C after etching, the epoxy resin is left as a passivation layer 28 and works as a mask in a process, in which a remaining chromium seed layer 12 is removed from exposed surfaces of copper layers 14 and 20, and the removed surface of the layers 14 and 20 are plated with gold. In this structure, contacts which are joined with a chip are formed.
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