公开(公告)号：GB1270226A

公开(公告)日：1972-04-12

申请号：GB26171

申请日：1971-01-04

Applicant: IBM

Inventor： DEWITT DAVID ,  DHAKA VIR ABHIMANYU ,  OBERAI AVTAR SINGH

IPC: H01L23/522 ,  H01L21/283 ,  H01L21/329 ,  H01L21/331 ,  H01L21/768 ,  H01L23/29 ,  H01L23/485 ,  H01L29/73

Abstract: 1,270,226. Transistors. INTERNATIONAL BUSINESS MACHINES CORP. 4 Jan., 1971 [9 Jan., 1970], No. 261/71. Heading H1K. In making a transistor a layer of silicon dioxide and a superposed layer of silicon nitride are formed on the base region, an aperture opened in the layers and impurity diffused through it to form the emitter region, a further base contact aperture opened in the layers and metal deposited over the layers and in this aperture to form a base contact, a further layer of silicon dioxide deposited overall and then selectively etched to re-expose the emitter region and metal deposited on this layer and the emitter region to form an emitter contact. In the embodiment (Fig. 9) the metal layers 7, 10 are aluminium, or molybdenum on platinum, and the emitter is diffused prior to formation of the base contact apertures. Conventional processes, which are described, are used to form the oxide layers 2, 8a and nitride layer 3, and the first metal layer, 7 of aluminium, initially deposited overall, is removed from the emitter by etching in a specified phosphoric-nitric acid mix. In an alternative method the base contact and emitter diffusion apertures are formed simultaneously. Then a further layer of oxide is deposited overall, etched from the emitter aperture to allow the diffusion and subsequently from the base contact aperture.

公开(公告)号：GB1270227A

公开(公告)日：1972-04-12

申请号：GB26771

申请日：1971-01-04

Applicant: IBM

Inventor： DHAKA VIR ABHIMANYU ,  KOZIK ANDREW FABIAN

IPC: H01L29/73 ,  H01L21/00 ,  H01L21/265 ,  H01L21/283 ,  H01L21/316 ,  H01L21/329 ,  H01L21/331 ,  H01L21/768 ,  H01L23/485 ,  H01L23/522

Abstract: 1,270,227. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 4 Jan., 1971 [22 Jan., 1970], No. 267/71. Heading H1K. Ion bombardment through an apertured metal layer on the surface of a semi-conductor body forms a PN junction, which is subsequently passivated by superficially oxidizing the metal to such an extent that the oxide formed at the edge of the layer overlies the junction. In the embodiment the junction is the emitter junction of a junction-isolated transistor. After forming a junction-isolated N-type epitaxial collector region and base region 34 by known techniques, apertures are formed in the oxide 35 (Fig. 3.17) over the base zone and a contact area of the collector. Aluminium is deposited overall and etched back to form the collector connection 37 which is then anodized. Aluminium is again deposited overall and etched to fashion a base connection 39 which forms an annular contact with the base zone. Phosphorus ions are implanted into the area of this zone exposed within the annulus to form the emitter zone 41 and the base connection then anodized, 49, to insulate the connection and passivate the emitter junction. Further aluminium is deposited and etched to form emitter connection 43 which is in turn anodized. Additional interconnecting tracks 47 of anodized aluminium may be formed as desired.