公开(公告)号：CA1133133A

公开(公告)日：1982-10-05

申请号：CA335224

申请日：1979-09-05

Applicant: IBM

Inventor： DEKEERSMAECKER ROGER F ,  DIMARIA DONELLI J ,  YOUNG DONALD R

IPC: H01L27/112 ,  H01L21/28 ,  H01L21/8246 ,  H01L21/8247 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  G11C11/40

Abstract: NON-VOLATILE MEMORY DEVICES FABRICATED FROM GRADED OR STEPPED ENERGY BAND GAP INSULATOR MIM OR MIS STRUCTURES of the Invention New non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structures are described. With the graded or stepped insulator, electrons or holes can be injected from the gate electrode at low to moderate applied fields. The carriers flow under the applied field into a wide energy band gap insulator having a prescribed charge trapping layer. This layer captures and stores electrons (write operation) or holes (erase operation) with 100% efficiency. Y0978-007

公开(公告)号：AU3469478A

公开(公告)日：1979-10-11

申请号：AU3469478

申请日：1978-04-03

Applicant: IBM

Inventor： DIMARIA DONELLI J ,  YOUNG DONALD R

IPC: H01L27/04 ,  H01L21/3115 ,  H01L21/316 ,  H01L21/822 ,  H01L29/78 ,  H01L29/94 ,  H01G4/08 ,  H01G13/00 ,  H01L49/02 ,  H01L21/265 ,  H01L21/285 ,  H01L21/324

Abstract: A high field capacitor structure comprising: a pair of separate electrodes, and an insulating layer dispersed between said pair of electrodes, said insulating layer having a carrier capture region. (Machine-translation by Google Translate, not legally binding)

公开(公告)号：FR2395604A1

公开(公告)日：1979-01-19

申请号：FR7804977

申请日：1978-02-15

Applicant: IBM

Inventor： DIMARIA DONELLI J ,  YOUNG DONALD R

IPC: H01L29/417 ,  G11C16/04 ,  H01L21/28 ,  H01L21/3115 ,  H01L21/8247 ,  H01L27/088 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H01L29/94 ,  H01L45/00 ,  H01L27/08 ,  G11C11/34 ,  H01L29/06

公开(公告)号：CA1091312A

公开(公告)日：1980-12-09

申请号：CA299176

申请日：1978-03-17

Applicant: IBM

Inventor： DIMARIA DONELLI J ,  YOUNG DONALD R

IPC: H01L27/04 ,  H01L21/3115 ,  H01L21/316 ,  H01L21/822 ,  H01L29/78 ,  H01L29/94 ,  H01L29/34

Abstract: A high field capacitor structure includes an insulating layer having a carrier trapping region between two electrodes. The trapping region improves electric breakdown characteristics of the capacitor structure and is particularly useful in avoiding the low breakdown voltages and high leakage currents normally encountered in structures with asperities, such as SiO2 over poly Si. The trapping region can be formed by chemical vapor deposition (CVD) process, by evaporation or by ion implantation. The trapping region is close to the Si, but far enough away to eliminate the possibility of reverse tunneling from discharging the traps in the absence of an applied voltage.

公开(公告)号：FR2395606A1

公开(公告)日：1979-01-19

申请号：FR7804188

申请日：1978-02-08

Applicant: IBM

Inventor： DIMARIA DONELLI J ,  YOUG DONALD R

IPC: H01L21/3115 ,  H01L29/51 ,  H01L29/792 ,  H01L29/94

Abstract: One electrode is a substrate and the insulating region is an oxide on the substrate. The interface between the substrate and the insulator presenting irregularities tends to produce locally high electric fields, which are counteracted by the charge-trapping region, situated close to the interface. Improved breakdown voltages are thus obtained.

公开(公告)号：DE2810597A1

公开(公告)日：1979-01-11

申请号：DE2810597

申请日：1978-03-11

Applicant: IBM

Inventor： DIMARIA DONELLI J ,  YOUNG DONALD R

IPC: H01L29/417 ,  G11C16/04 ,  H01L21/28 ,  H01L21/3115 ,  H01L21/8247 ,  H01L27/088 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H01L29/94 ,  H01L45/00 ,  H01L29/76 ,  G11C11/34

公开(公告)号：DE2805170A1

公开(公告)日：1979-01-04

申请号：DE2805170

申请日：1978-02-08

Applicant: IBM

Inventor： DIMARIA DONELLI J ,  YOUNG DONALD R

IPC: H01L27/04 ,  H01L21/3115 ,  H01L21/316 ,  H01L21/822 ,  H01L29/78 ,  H01L29/94

Abstract: A high field capacitor structure comprising: a pair of separate electrodes, and an insulating layer dispersed between said pair of electrodes, said insulating layer having a carrier capture region. (Machine-translation by Google Translate, not legally binding)